Abstract
Algorithms for solving algebrized transfer equations on a continuous rectangular grid are proposed. The efficiency of the methods proposed is illustrated by performing a numerical two-dimensional simulation of a submicron bipolar transistor in the high injection-level mode.
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Abbreviations
- ε:
-
relative dielectric constant
- ψ:
-
electrostatic potential
- ρ:
-
charge
- n, p :
-
concentrations of electrons and holes
- t :
-
time
- j n , j p :
-
densities of electron and hole currents
- R :
-
excess of recombination rate of charge carriers over generation rate
- q :
-
elementary charge
- μ n , μ p :
-
electron and hole mobilities
- k :
-
Boltzmann constant
- T :
-
absolute temperature
- C :
-
resulting dopantt concentration
- Qss :
-
bound charge at the Si/SiO2 interface
- t m , t a :
-
performance times for floating-point multiplication and addition operations
- ce:
-
collector-emitter
- be:
-
base-emitter
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 70, No. 1, pp. 156–162, January–February, 1997.
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Belyavskii, S.S., Mulyarchik, S.G. & Popov, A.V. Algorithms for solving algebrized transfer equations. J Eng Phys Thermophys 70, 161–168 (1997). https://doi.org/10.1007/s10891-997-0029-5
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DOI: https://doi.org/10.1007/s10891-997-0029-5