Thin films of amorphous silicon with inclusions of a nanocrystalline silicon phase have been obtained by the method of gas-phase chemical deposition with hot-wire activation of the precursor. The influence of the gas pressure and of the hydrogen–monosilane ratio on the rate of growth and the degree of crystallinity of the deposited silicon has been investigated. Characteristic values of the synthesis parameters for obtaining silicon films of various degrees of crystallinity have been established.
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 88, No. 4, pp. 969–972, July–August, 2015.
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Andreev, M.N., Rebrov, A.K., Safonov, A.I. et al. Production of Amorphous and Nanocrystalline Silicon Films by the Hot-Wire Activation Method. J Eng Phys Thermophy 88, 1003–1007 (2015). https://doi.org/10.1007/s10891-015-1277-4
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DOI: https://doi.org/10.1007/s10891-015-1277-4