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Temperature fields in thin wide-profile plates obtained from a melt by the Stepanov technique under nonsymmetric conditions of growth

  • A. V. Zhdanov
  • A. V. Borodin
  • M. V. Yudin
Article

A mathematical model is suggested allowing one to determine the temperature fields in thin wide-profile plates when growing them from a melt by the Stepanov technique depending on the asymmetry in the position of a growing crystal relative to the nearby screens, as well as on the difference between the surface temperatures of the left and right screens. The model contains the heat conduction equation and a system of integral equations that connects the densities of radiant and temperature fluxes.

Keywords

Stepanov’s technique temperature fields radiation heat transfer 

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References

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    V. M. Krymov, V. N. Kurlov, P. I. Antonov, et al., Distribution of temperature and of thermoelastic stresses near the crystallization front in the ribbon crystals of sapphire grown by the EFG- and GES variants of the Stepanov technique, Izv. Ross. Akad. Nauk, Ser. Fiz., 63, No. 9, 1809–1815 (1999).Google Scholar
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    P. I. Antonov, S. I. Bakholdin, M. G. Vasil’ev, et al., Analysis of the main factors determining the distribution of temperature in leukosapphire crystals when grown by the Stepanov technique, Izv. Ross. Akad. Nauk, Ser. Fiz., 58, No. 9, 72–80 (1994).Google Scholar
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    R. Siegel and J. K. Howell, Thermal Radiation Heat Transfer [Russian translation], Mir, Moscow (1975).Google Scholar

Copyright information

© Springer Science+Business Media, Inc. 2010

Authors and Affiliations

  1. 1.Institute of Solid State PhysicsRussian Academy of SciencesChernogolovka of Moscow RegionRussia
  2. 2.Federal State Unitary “Enterprise Experimental Plant of the Academy of SciencesˮChernogolovka of Moscow RegionRussia

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