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Effect of ZnS and PbS shell on mem-behavior of CdS quantum dots

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Abstract

In this paper, a systematic study is carried out on mem-behavior of CdS, CdS@ZnS, and CdS@PbS core–shell nanocomposites with emphasis on the effect of ZnS and PbS shell on mem-behavior of CdS quantum dots. From X-ray diffraction, the CdS quantum dots are found to be hexagonal in nature with average crystallite size ~ 10.3 nm. From high-resolution transmission electron microscope images, the particle size is calculated around 3–4 nm for CdS quantum dots. For core–shell nanoparticles, formation of epitaxial shell layer on CdS core is clearly evident with enhancement in particle sizes. Active layer of as-synthesized samples is deposited on Indium tin oxide-coated glass which is used as one electrode. Aluminium is used as counter electrode and deposited over the active layer using thermal evaporation technique. The fabricated devices show bipolar switching characteristics with prominent hysteresis loops. The current–voltage characteristics of the devices show memristive, memcapacitive, and meminductive behavior depending on the type of active layer used. It is also observed that the inclusion of ZnS and \(\mathrm{PbS}\) shell significantly alters the mem-behavior of the CdS quantum dots which is the major finding of this study. The conduction through the device is found to be due to coulomb blockade which also supports the ON/OFF switching mechanism. The sensitivity of the devices can be determined from RON/ROFF ratio, and it is found to be higher for CdS@ZnS core–shell nanoparticles compared to CdS quantum dots and CdS@PbS nanoparticles.

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Data availability

The datasets used and/or analysed during the current study are available from the corresponding author on reasonable request.

Abbreviations

CdS:

Cadmium sulphide

ZnS:

Zinc sulphide

PbS:

Lead sulphide

ZnO:

Zinc oxide

CdSe:

Cadmium selenide

Fe2O3 :

Ferric oxide

R :

Resistor

L :

Inductor

C :

Capacitor

PVA:

Polyvinyl alcohol

q :

Charge

Φ :

Magnetic flux

Cu:

Copper

ITO:

Indium tin oxide

Al:

Aluminium

PVP:

Polyvinylpyrrolidone

QDs:

Quantum dots

XRD:

X-ray diffraction

UV–Vis:

Ultra violet–visible spectroscopy

PL:

Photoluminescence spectroscopy

FWHM:

Full width at half maximum

HRTEM:

High-resolution transmission electron microscopy

SAED:

Selected area electron diffraction

EDS:

Energy-dispersive X-ray spectroscopy

AFM:

Atomic force microscopy

MR:

Memristive

MC:

Memcapacitive

MI:

Meminductive

MEF:

Memristor efficiency factor

HRS:

High resistance region

LRS:

Low resistance region

HWO:

Hysteresis width at ‘0V’

CB:

Coulomb blockade

RT:

Resonant tunneling

NDR:

Negative differential resistance

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Acknowledgements

The authors would like to thank CIF, Gauhati University for providing SEM and EDS analysis, SAIF, NEHU, Shillong for providing HRTEM and SAED facilities, CSR Indore Centre for AFM characterization, and SAIF Gauhati University for providing XRD facilities. The authors are grateful to the Energy, Emission and Environment research group, Huddersfield University, England, for their technical support.

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Authors and Affiliations

  1. Department of Electronics and Communication Technology, Gauhati University, Assam, India

    Hirendra Das & Pranayee Datta

  2. Department of Mechanical Engineering, University of Huddersfield, Huddersfield, UK

    Qiang Xu

Authors
  1. Hirendra Das
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  2. Qiang Xu
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  3. Pranayee Datta
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Contributions

All the experimental and theoretical works are done by ‘HD’. The paper is written by ‘HD’ and helped by ‘QX’. Technical guidance was provided by ‘QX’ and also some necessary modifications are done by him. This whole work is guided by ‘PD’ and theoretical concepts were introduced in the paper by her. All the three authors finally checked and approved the manuscript.

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Correspondence to Hirendra Das.

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Das, H., Xu, Q. & Datta, P. Effect of ZnS and PbS shell on mem-behavior of CdS quantum dots. J Mater Sci: Mater Electron 32, 7049–7060 (2021). https://doi.org/10.1007/s10854-021-05415-6

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  • DOI: https://doi.org/10.1007/s10854-021-05415-6

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