Solution-processed metal-oxide semiconductors are a great challenge for advanced electronic devices. Here we report the fabrication of field-effect transistor with a cupric oxide (CuO) films prepared by the sol–gel technique. The X-ray diffraction and optical spectroscopy confirmed the presence of polycrystalline cupric oxide film with an energy gap of 1.0 eV. The field-effect transistor proved semiconductor behaviour with p-type conductivity and the charge mobility of 0.034 cm2/V s and On/Off ratio of 104, that makes the sol–gel technique a suitable low-cost alternative of sputtering technique.
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Funding was provided by Agentúra na Podporu Výskumu a Vývoja Grant Nos. (APVV-16-0079, APVV-17-0522, APVV-17-0501), Agentúra Ministerstva Školstva, Vedy, Výskumu a Športu SR Grant No. (1/0452/19).
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Vincze, T., Micjan, M., Pavuk, M. et al. Fabrication of cupric oxide‐based transistors by sol–gel technique. J Mater Sci: Mater Electron 32, 6883–6889 (2021). https://doi.org/10.1007/s10854-021-05393-9