Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film


The effects of Mg35Sb65 layer on the thermal stability and thickness change rate of Ge2Sb2Te5 in superlattice films were studied. Compared with monolayer Ge2Sb2Te5 films, Mg35Sb65/Ge2Sb2Te5 films had higher resistance and crystallization temperature. The thermal stability and data retention capability were improved significantly. The fundamental reason of the change of film resistance was explained from the change of energy band gap. According to the reliability of phase change memory devices, the thickness change rate of thin films was analyzed in detail.

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This work was supported by the National Natural Science Foundation of China (No. 11974008 and 11774438) and Changzhou key laboratory of high technology research (CM20173002) and the Opening Project of Institute of Semiconductors, Chinese Academy of Sciences (KLSMS-1805), and practice Innovation Program of Jiangsu Province (SJCX19_0712).

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Sun, S., Hu, Y., Lai, T. et al. Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film. J Mater Sci: Mater Electron (2021). https://doi.org/10.1007/s10854-021-05358-y

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