Abstract
In this study, a series of optimization steps were performed in the production of Al-doped ZnO (AZO) thin films to tailor their properties as efficient transparent heaters and for near-infrared (NIR) reflectance. The films were produced on 50 × 75 mm2 glass substrates via magnetron sputtering and capped with a protective SiO2 layer. Processing parameters such as deposition temperature, film thickness, and annealing conditions were all optimized in terms of structure, morphology, optical/electrical properties, and heating/deicing behavior. Electro-thermal characteristics of the films were investigated using a thermal imaging infrared camera under various input voltages. The optimized AZO/SiO2 coatings displayed impressive room-temperature electrical conductivity (σ) of nearly 3774 S/cm with a sheet resistance (Rs) of 3.53 Ω/□, carrier concentration (η) of 1.14 × 1021, and Hall mobility (µ) of 20.48 cm2/Vs. These films exhibited very high optical transmittance (above 96%) in the visible range and reflectance (73% at 2500 nm) in the NIR region. The highest figure of merit (FOM) was achieved as 237 (× 10–3 Ω−1). Deicing tests were performed with samples cooled to − 40 °C and resulted with complete removal of ice/water only within 3 min. In addition, the heater exhibited a high surface temperature of 161 °C (12 V), a good thermal resistance value (219 °C cm2/Watts) with stable and reversible heating behavior. More importantly, these results reveal the potential of optimized AZO/SiO2 coatings as alternatives to transparent tin-doped indium oxide heaters and NIR reflecting mirrors for vehicular applications.
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This study was supported financially by the Scientific and Technological Research Council of Turkey (TÜBİTAK; Project Number: 118M013), for which the authors are thankful.
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Can, H.A., Tönbül, B., Pişkin, F. et al. Processing optimization of SiO2-capped aluminum-doped ZnO thin films for transparent heater and near-infrared reflecting applications. J Mater Sci: Mater Electron 32, 5116–5137 (2021). https://doi.org/10.1007/s10854-021-05245-6
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DOI: https://doi.org/10.1007/s10854-021-05245-6