Effect of Ta doping on the properties of β-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates


β-Ga2O3 single-crystal films with Ta doping concentrations of 0–1.4 at.% were prepared on KTaO3(100) substrates by metal–organic chemical vapor deposition. Herein, we investigated the influence of Ta doping concentration on the structural and electrical properties of the films. X-ray diffraction results showed that the crystalline quality of the films slightly deteriorated with the increase of doping concentration, and the epitaxial relationship was identified as β-Ga2O3(100)//KTaO3(100) with β-Ga2O3[001]//KTaO3 < 011 > . The chemical composition and surface morphology of the films were characterized using X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. Hall effect measurement determined that the resistivity and carrier concentration of the films were in the range of 14.8 ~ 5.01 × 103 Ω cm and 3.85 × 1016 ~ 3.97 × 1018 cm−3, respectively, whereas the film with 0.2 at.% Ta doping concentration presented the highest Hall mobility of 4.56 cm2 V−1 s−1.

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This work was supported by the Key Technology Research and Development Program of Shandong [Grant Number 2018GGX102024]; the National Natural Science Foundation of China [Grant Number 61874067]; and the Natural Science Foundation of Shandong Province [Grant Number ZR2019MF042].

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Wang, D., Xiao, H., Le, Y. et al. Effect of Ta doping on the properties of β-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates. J Mater Sci: Mater Electron 32, 2757–2764 (2021). https://doi.org/10.1007/s10854-020-05015-w

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