Abstract
Sn is the main interconnect material for three-dimensional (3D) Packaging of chip stacking in electronic packaging. In this paper, the intermetallic compound (IMC) produced through an interfacial reaction between Sn-xCNTs (x = 0, 0.075 wt%) solder and a Cu substrate was evaluated at 130 °C, 150 °C, and 170 °C for 30, 50, 100 h and after multiple reflows (3, 6, 9). In Sn-0.075CNTs system, CNTs inhibited the growth of Cu6Sn5 and refine the microstructure of solder joint. The growth rate of IMC decreased after reflowing and aging for 100 h. Compared to pure Sn/Cu system, the thickness of Cu6Sn5 and Cu3Sn was the thinner when the CNTs addition amount was 0.075 wt%. Some voids and cracks were formed in solder joints after reflowing and thermal aging. At this time, the IMC growth activation energies of Sn solder is 33.256 kJ/mol, and that of Sn-0.075CNTs composite solder is 58.19 kJ/mol.
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The present work was carried out with the support of the Key project of State Key Laboratory of Advanced Welding and Joining (Grant No. AWJ-19Z04).
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Xu, Kk., Zhang, L. & Jiang, N. Effect of CNTs on the intermetallic compound growth between Sn solder and Cu substrate during aging and reflowing. J Mater Sci: Mater Electron 32, 2655–2666 (2021). https://doi.org/10.1007/s10854-020-04755-z
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DOI: https://doi.org/10.1007/s10854-020-04755-z