In this paper, the Mg35Sb65/Sn15Sb85 superlattice-like films were prepared by magnetron sputtering and the comprehensive properties of were systematically studied. The amorphous-to-crystalline transformation was researched with a situ resistance–temperature measurement system to evaluate the thermal stability. X-ray diffraction, Raman and transmission electron microscopy were employed to explore the change of phase structure at different annealing temperatures. The reversible resistance switching was achieved for [MgSb(7 nm)/SnSb(3 nm)]5-based devices. The results showed that Mg35Sb65/Sn15Sb85 superlattice-like film was a promising phase change material with good thermal stability, fast phase transition and low power consumption.
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This work was supported by National Natural Science Foundation of China (Nos. 11974008 and 11774438) and Changzhou key laboratory of high technology research (CM20173002) and the Opening Project of Institute of Semiconductors, Chinese Academy of Sciences (KLSMS-1805) and practice Innovation Program of Jiangsu Province (SJCX19_0712).
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Sun, S., Hu, Y., Lai, T. et al. Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application. J Mater Sci: Mater Electron (2020). https://doi.org/10.1007/s10854-020-03794-w