Abstract
Tin disulfide (SnS2) is one of the potential candidates for optoelectronics because of its chemical and environmental stability accompanied by favourable characteristics. Herein, the SnS2 thin films are deposited by different techniques; chemical bath deposition (CBD), dip coating (DC) and spin coating (SC). The energy dispersive analysis of x-ray confirms the stoichiometry of the films deposited by these techniques. The x-ray diffraction showed hexagonal lattice structure of thin films. The morphology is studied by transmission electron, scanning electron and optical microscopy. The selected area electron diffraction exhibited ring patterns, confirming the polycrystalline nature of the deposited thin films. The atomic force microscopy showed presence of globular grains, hills and valleys on surfaces of thin films. The absorption spectra analysis showed the thin film possess direct optical bandgap of 2.39 eV for CBD, 2.50 eV for DC and 2.75 eV for SC. Raman spectra of the as-deposited SnS2 thin films showed occurrence of A1g phonon mode at 314 cm−1. The electrical transport properties assessment depicts the n-type semiconducting nature of deposited thin films. The as-deposited thin films showed good pulsed photoresponse for white light illumination intensities of 80 mW/cm2 and 120 mW/cm2.
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Acknowledgements
All the authors are thankful to the Department of Metallurgical and Materials Engineering, The M S University of Baroda, Vadodara for EDAX analysis; the Sophisticated Instrumentation Centre for Applied Research & Testing (SICART), Vallabh Vidyanagar, Gujarat, India for UV–Vis-NIR Spectroscopy analysis; Shah-Schulman Centre for Surface Science and Nanotechnology (SSCSSN), Dharmsinh Desai University (DDU), Nadiad, Gujarat, India for XRD and AFM analysis; Indukaka Ipcowala Centre for Interdisciplinary Studies in Science and Technology (IICISST), Sardar Patel University, Vallabh Vidyanagar, Gujarat, India for I–V measurement.
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Khimani, A.J., Chaki, S.H., Chauhan, S.M. et al. Influence of deposition techniques on quality and photodetection properties of tin disulfide (SnS2) thin films. J Mater Sci: Mater Electron 30, 13118–13133 (2019). https://doi.org/10.1007/s10854-019-01675-5
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DOI: https://doi.org/10.1007/s10854-019-01675-5