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Enhanced dielectric properties of barium strontium titanate thin films by doping modification

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Abstract

Barium strontium titanate (BaxSr1–xTiO3, BST) thin films have large dielectric constant, low dielectric loss, especially the high dielectric tunability, which make them prospective candidates for microwave tunable applications. Resent developments in BST thin films by doping modification are reviewed. The A-site doping, B-site doping, and both sites codoping modifications are summarized and analyzed, respectively. The comparison of dielectric properties and microstructure of the BST thin films with different sites doping modifications is critically analyzed. The single A-site or B-site doping modification cannot obtain the BST thin films with balanced enhancement of the dielectric properties. However, the different elements codoping in both A-site and B-site of BST thin films is demonstrated to be an effective method to achieve balanced dielectric property optimization.

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Acknowledgements

The authors grateful acknowledge the support from the Natural Science Foundation of China (Grant No. 51602037) and the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (KFJJ201510).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, 610054, People’s Republic of China

    Libin Gao, Zhipu Guan, Kexin Liang, Hongwei Chen & Jihua Zhang

  2. Collaboration Innovation Center of Electronic Materials and Devices, Chengdu, 610054, People’s Republic of China

    Libin Gao, Zhipu Guan, Kexin Liang, Hongwei Chen & Jihua Zhang

  3. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China

    Libin Gao, Zhipu Guan, Kexin Liang, Hongwei Chen & Jihua Zhang

  4. School of Materials and Energy, Chengdu, 610054, People’s Republic of China

    Shixian Huang

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Gao, L., Guan, Z., Huang, S. et al. Enhanced dielectric properties of barium strontium titanate thin films by doping modification. J Mater Sci: Mater Electron 30, 12821–12839 (2019). https://doi.org/10.1007/s10854-019-01670-w

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