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Photovoltaic properties of nanostructured copper sulfide incorporated silicon rich composites

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Abstract

In the present experimentation, the photovoltaic properties of CuS incorporated SiO2 nanocomposites were investigated. The nanocomposite between CuS and SiO2 were prepared by solid state diffusion method. During the process of solid state diffusion, silicic acid was used as source of silicon. The prepared composites characterized by X-ray diffractions, scanning electron microscopy, ultraviolet–visible spectrophotometers, Raman spectroscopy, photoluminescence spectroscopy and thermal analysis and photovoltaic measurements. IV characteristics of PV cell shows that performance of cell is sensitive to concentration of CuS in composite. The optimized power conversion efficiency was 1.11% found to be for 15 wt% CuS loaded SiO2 composite having fill factor 0.189 under the power incidence of 0.0104 W/m2.

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Acknowledgements

Authors are very much thankful to the Head, Department of Physics, Sant Gadge Baba Amravati University, Amravati, India, for providing necessary facilities.

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Authors and Affiliations

  1. Department of Engineering Physics, Shri Sant Gadge Baba College of Engineering and Technology, Bhusawal, 425203, India

    Anant M. Kute

  2. Department of Physics, Sant Gadge Baba Amravati University, Amravati, 444 602, India

    Sandeep A. Waghuley

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  1. Anant M. Kute
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  2. Sandeep A. Waghuley
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Correspondence to Sandeep A. Waghuley.

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Kute, A.M., Waghuley, S.A. Photovoltaic properties of nanostructured copper sulfide incorporated silicon rich composites. J Mater Sci: Mater Electron 29, 16199–16206 (2018). https://doi.org/10.1007/s10854-018-9709-5

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  • DOI: https://doi.org/10.1007/s10854-018-9709-5

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