Influence of substrate temperature on the physical properties of SnS2 thin films prepared using nebulized spray pyrolysis technique

  • N. Anitha
  • M. Anitha
  • J. Raj Mohamed
  • S. Valanarasu
  • L. Amalraj


Influence of substrate temperature on the physical properties of Tin disulfide (SnS2) thin films is investigated. X-ray diffraction studies revealed that the SnS2 thin films are preferentially oriented as (001) plane. SEM analysis showed that SnS2 thin films had platelet-like grains. EDAX analysis clearly confirms the presence of expected elements of tin and sulfur in appropriate proportions. Multiple interference effects were predominant in all these thin films in wavelength region of 500–1100 nm. The direct optical band gap of tin disulfide thin films had decreased from 3.26 to 2.7 eV with the increase in substrate temperature. Photoluminescence studies expose that the intensity of NBE emission peaks differs according to the substrate temperature. A minimum resistivity value of 2.19 × 101 Ω cm was obtained for the film grown at Ts = 250 °C. Hall Effect measurement exhibited that all the SnS2 samples had n-type conductivity. Raman spectra exposed that SnS2 films had a broad peak at 314 cm− 1.


  1. 1.
    N. Badera, B. Godbole, S.B. Srivastava, P.N. Vishwakarma, L.S.S. Chandra, D. Jain, V.G. Sathe, V. Ganesan, Photoconductivity in Cd1 – xMnxS thin films prepared by spray pyrolysis technique. Sol. Energy Mater. Sol. Cells 92, 1646 (2008)CrossRefGoogle Scholar
  2. 2.
    A. Sanchez-Juarez, A. Ortiz, Effects of precursor concentration on the optical and electrical properties of SnxS thin films prepared by plasma-enhanced chemical vapour deposition. Semicond. Sci. Technol 17, 931 (2002)CrossRefGoogle Scholar
  3. 3.
    L.A. Burton, D. Colombara, R.D. Abellen, F.C. Grozema, L.M. Peter, T.J. Savenije, Synthesis, characterization, and electronic structure of single-crystal SnS, Sn2S3 and SnS2. Chem. Mater. 25, 4908 (2013)CrossRefGoogle Scholar
  4. 4.
    J.A. Andrade-Arivuzu, M. Courel-Piedrahita, O. Vigil-Galan, SnS-based thin film solar cells: perspectives over the last 25 years. J. Mater. Sci. Mater. Electron. 26, 4541 (2015)CrossRefGoogle Scholar
  5. 5.
    L.A. Burton, T. Whittle, D. Hesp, W.M. Linhart, J.M. Skelton, B. Hou, R.F. Webster, G. O’Dowl, C. Ree, D. Cherns, D.J. Fermin, T.D. Veal, V. Dhanuk, A. Walsh, Electronic and optical properties of single crystal SnS: an earth-abundant disulfide photocatalyst. J. Mater. Chem. A 4, 1312 (2015)CrossRefGoogle Scholar
  6. 6.
    S.C. Ray, M.K. Karanjai, D. Gupta, Structure and photoconductive properties of dip-deposited SnS and SnS2 thin films and their conversion to tin dioxide by annealing in air. Thin Solid Films 350, 72 (1999)CrossRefGoogle Scholar
  7. 7.
    C.D. Lokhande, A chemical method for tin disulphide thin film deposition. J. Phys D 23, 1703 (1990)CrossRefGoogle Scholar
  8. 8.
    Q. Yang, K. Tang, C. Wang, J. Zuo, D. Zhang, Y. Qian, A hexane solution deposition of SnS films from tetrabutyltin via a solvothermal route at moderate temperature. Thin Solid Films 436, 203 (2003)CrossRefGoogle Scholar
  9. 9.
    J. George, K.S. Joseph, Absorption edge measurements in tin disulphide thin films. J. Phys. D 15, 1109 (1982)CrossRefGoogle Scholar
  10. 10.
    J. George, K.S. Joseph, Effect of heating on the electrical and optical properties of tin disulphide thin films. J. Phys. D 16, 33 (1983)CrossRefGoogle Scholar
  11. 11.
    N.G. Despande, A.A. Sagade, Y.G. Gudage, C.D. Lokhande, R. Sharma, Growth and characterization of tin disulfide (SnS2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique. J. Alloy Compd. 436, 421 (2007)CrossRefGoogle Scholar
  12. 12.
    J. Malaquias, P.A. Fernades, P.M.P. Salome, A.F. da Cunha, Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers. Thin Solid Films 519, 7416 (2011)CrossRefGoogle Scholar
  13. 13.
    C. Shi, P. Yang, M. Yao, X. Dai, Z. Chen, Influence of annealing on characterics of tin disulfide thin films by vacuum thermal evaporation. Thin Solid Films 520, 4898 (2012)CrossRefGoogle Scholar
  14. 14.
    I.B. Kherchachi, H. Saidi, A. Attah, N. Attaf, Influence of solution flow rate on the properties of SnS2 films prepared by ultrasonic spray. Optik, 127, 4043 (2016)CrossRefGoogle Scholar
  15. 15.
    K. Kawano, R. Nataka, M. Sumita, Effects of substrate temperature on absorption edge and photocurrent in evaporated amorphous SnS2 films. J. Phys. D 22, 136 (1989)CrossRefGoogle Scholar
  16. 16.
    J. Li, Y.C. Zhang, M. Zhang, Preparation of SnS2 thin films by chemical bath deposition. Mater. Sci. Forum, 663–665, 104 (2011)Google Scholar
  17. 17.
    C. Shi, P. Yang, M. Yao, X. Dai, Z. Chen, Preparation of SnS2 thin films by closed space sublimation at different source temperature. Thin Solid Films 534, 28 (2013)CrossRefGoogle Scholar
  18. 18.
    A. Sanchez-Juarez, A. Tiburcio-Silver, A. Ortiz, Fabrication of SnS2/SnS heterojunction thin film diodes by plasma enhanced chemical vapor deposition. Thin Solid Films 480–481, 452 (2005)CrossRefGoogle Scholar
  19. 19.
    K. Vijayakumar, C. Sanjeeviraja, M. Jayachandran, L. Amalraj, Characterization of Tin disulphide thin films prepared at different substrate temperature using spray pyrolysis technique. J. Mater Sci: Mater. Electron. 22, 929 (2011)Google Scholar
  20. 20.
    M.R. Fadavieslam, N. Shahtahmasebi, M. Rezaee-Roknqgqei, M.M. Bagheri-Mohaghegi, Effect of deposition conditions on the physical properties of SnxSy thin films prepared by spray pyrolysis technique. J. Semicond. 32, 113002 (2011)CrossRefGoogle Scholar
  21. 21.
    B. Thangaraju, P. Kaliannan, Spray pyrolytic deposition and characterization of SnS, and SnS2 thin films. J. Phys. D: Appl. Phys. 33, 1054–1059 (2000)CrossRefGoogle Scholar
  22. 22.
    K.D.A. Kumar, S. Valanarasu, L. Amalraj, Structural, morphological and optical properties of SnS2 thin films by nebulized spray pyrolysis technique. J. Mater. Sci.: Mater. Electron. 28(19), 14209–14216 (2017)Google Scholar
  23. 23.
    A.M.S. Arulanantham, S. Valanarasu, K. Jeyadheepan, Effect of sulfur concentration of the properties of tin disulphide thin films by nebulizer spray pyrolysis technique. J. Mater. Sci.: Mater. Electron. 28(24), 18675–18685 (2017)Google Scholar
  24. 24.
    N. Anitha, M. Anitha, L. Amalraj, Influence of precursor on the properties of tin disulphide (SnS2) thin films prepared by nebulized spray pyrolysis technique. Optik, 148, 28 (2017)CrossRefGoogle Scholar
  25. 25.
    J. Raj Mohamed, L. Amalraj, Effect of precursor concentration on physical properties of nebulized spray deposited In2S3 thin films. J. Asian Ceram. Soc. 4, 357 (2016)CrossRefGoogle Scholar
  26. 26.
    S.K. Panda, A. Antonakos, E. Liarokapis, S. Bhattacharya, S. Chaudhur, Optical properties of nanocrystalline SnS2 thin films. Mater. Res. Bull. 42, 576 (2007)CrossRefGoogle Scholar
  27. 27.
    T. Srinivasa Reddy, M.C. Santhosh Kumar, Effect of substrate temperature on the physical properties of co-evaporated Sn2S3 thin films. Ceram. Int. 42, 12262 (2016)CrossRefGoogle Scholar
  28. 28.
    S. Lopez, S. Granados, A. Ortiz, Spray pyrolysis deposition of Sn2S3 thin films. Semicond. Sci. Tech. 11, 433 (1996)CrossRefGoogle Scholar
  29. 29.
    K.L. Chopra, Thin Film Phenomena. (McGraw-Hill, New-York, 1969), p 270Google Scholar
  30. 30.
    G.B. Williamson, R.C. Smallman, Dislocation densities in Xomc annealed and cold-worked metals from measurements on the X-ray Debye-Scherrer spectrum. Philos. Mag. 1, 34 (1956)CrossRefGoogle Scholar
  31. 31.
    J.I. Pankaove, Optical Processed in Semiconductors (Prentice and Hall, Inc., New Jerssey, 1971), p. 36Google Scholar
  32. 32.
    I.B. Kherchachi, A. Attaf, H. Saidi, A. Bouhdjer, H. Bendjedidi, Y. Benkhetta, R. Azizi, Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic. J. Semicond. 37, 032001 (2016)CrossRefGoogle Scholar
  33. 33.
    L.S. Price, I.P. Parkin, A.M.E. Hardy, R.J.H. Clark, Atmospheric pressure chemical vapor deposition of tin sulfides (SnS, Sn2S3, and SnS2) on glass. J. Chem. Mater. 11, 1792 (1999)CrossRefGoogle Scholar
  34. 34.
    S. Wang, S. Wang, J. Chen, P. Liu, M. Chen, H. Xiong et al., Influence of the deposition parameters on the properties of SnS2 films prepared by PECVD method combined with solid sources. J. Nanoparticle Res. 16, 2610 (2014)CrossRefGoogle Scholar
  35. 35.
    A. Voznyi, V. Kosyak, A. Opanasyuk, N. Tirkusova, L. Grace, A. Medvids, G. Meziskis, Structural and electrical properties of SnS2 thin films. Mater. Chem. Phys. 173, 52 (2016)CrossRefGoogle Scholar
  36. 36.
    F. Liu, Y. Lai, J. Liu, B. Wang, S. Kuang, Z.Z. Li, Y. Liu, Characterization of chemical bath deposited CdS thin films at different deposition temperature. J. Alloys Compd. 493, 305 (2010)CrossRefGoogle Scholar
  37. 37.
    L. Amalraj, C. Sanjeeviraja, M. Jayachandran, Spray pyrolysized tin disulphide thin films and characterization. J. Cryst. Growth 234, 683 (2002)CrossRefGoogle Scholar
  38. 38.
    J. Raj Mohamed, C. Sanjeeviraja, L. Amalraj, Effect of substrate temperature on nebulized spray pyrolysised In2O3 thin films. J. Mater. Sci.: Mater. Electron. 27, 4437 (2016)Google Scholar
  39. 39.
    C. Khelia, K. Boubaker, T.B. Nasrallah, M. Amolouk, S. Belgacem, Morphological and thermal properties of β-SnS2 sprayed thin films using Baubaker polynamial expansion. J. Alloys Compd. 477, 461 (2009)CrossRefGoogle Scholar
  40. 40.
    A. Gowri Manohari, K. Santhosh kumar, C. Lou, T. Mahalingam, Buffer layer of antimony doped tin disulfide thin films for heterojunction solar cells. Mater. Lett. 155, 121 (2015)CrossRefGoogle Scholar
  41. 41.
    P. Prathap, Y.P.V. Subbaiah, KR. Reddy, R.W. Miles, Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films. J. Phys. D 40, 17 (2007)CrossRefGoogle Scholar
  42. 42.
    M. Devika, N.K. Reddy, K. Ramesh, K.R. Gunasekhar, E.S.R. Gopal, K.R. Reddy, Effect of annealing on physical properties of evaporated SnS thin films. J. Semicond. Sci. Technol. 21, 1125 (2006)CrossRefGoogle Scholar
  43. 43.
    G. Lucovsky, J.C. Mikkelson, Optical phonon anisotropies in the layer crystals SnS2 and SnSe2. Phys. Rev. B 14, 1663 (1976)CrossRefGoogle Scholar
  44. 44.
    S. Gedi, V.R.M. Reddy, B. Pejjai, C. Park, C.-W. Jeon, T.R. Kotte, Studies on chemical bath deposited SnS2 films for Cd-free thin film solar cells. Ceram. Int. 43, 3713 (2017)CrossRefGoogle Scholar

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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • N. Anitha
    • 1
  • M. Anitha
    • 1
  • J. Raj Mohamed
    • 1
    • 2
  • S. Valanarasu
    • 3
  • L. Amalraj
    • 1
  1. 1.Research Department of PhysicsV.H.N.S.N College (Autonomous)VirudhunagarIndia
  2. 2.Research Department of PhysicsH.H.The Raja’s CollegePudukkottaiIndia
  3. 3.PG and Research Department of PhysicsArul Anandar CollegeMaduraiIndia

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