Photoelectrochemical performance and biosensor application for glutathione (GSH) of W-doped BiVO4 thin films
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Tungsten-doped BiVO4 (W:BiVO4) thin films were deposited on the FTO glass through a spin-coating method and their photoelectrochemical (PEC) properties were investigated. Although W-doping does not significantly affect the morphology, structure and light harvesting a suitable W-doping treatment can enhance the PEC activity of BiVO4 thin films, leading to a 100% enhancement of the photocurrent. It is found that the doping of 10 at.% W leads to an increased photocurrent from 0.75 mA cm−2 (for undoped) to 1.5 mA cm−2. Moreover, through an electrochemical impedance analysis, the enhancement of PEC performance was mainly due to the enhanced n-type conductivity of BiVO4 and charge separation at the solid/liquid interface. A scheme model was proposed to clarify the reason for performance enhancement. Moreover, a PEC biosensor was fabricated for detecting the glutathione, leading to an excellent detect limit of 96 nM.
This work is financially supported by the Fundamental Research Funds for the Central Universities (2015XKMS037).
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