Structural design and fabrication of 830 nm GaAsP/AlGaAs low polarization superluminescent diode with tensile-strained wells
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In this paper, super luminescent diode (SLD) at 830 nm with high power efficiency and low polarization was reported. The mode gain of tensile-strained GaAsP/AlGaAs double-quantum well (DQW) was calculated by the Lüttinger–Kohn Hamiltonian, including confinement effects and tetragonal strain. The results showed that the transverse-electric polarized mode gain was almost the same with transverse-magnetic polarized mode gain of the device with GaAs0.92P0.08 quantum well. Tensile-strained GaAs0.92P0.08/Al0.25Ga0.75As DQW SLD was prepared by Metal–organic Chemical Vapor Deposition. The SLD of ridge wave guide structure was fabricated with “J-shape” absorbing region structure with a tilt angle of 7°. The stack layers of TiO2 and SiO2 were coated on two facets as anti-reflection films, with residual facet reflectivity less than 1%. The SLD testing result showed the degree of polarization was 4%, optical power was 11.2 mW and peak wavelength of 824 nm at injection current was 100 mA. The experimental results were in good agreement with theoretical calculation results.
- 7.D. Heo, J. Lee, I. Yun, H. Shin, S. Kim, D. Jung, D. Shin, H. Kim, H. Shin, S. Park, in Lasers and Electro-Optics Society, 2005 (LEOS 2005). The 18th Annual Meeting of the IEEE (2005)Google Scholar
- 8.T. Li, J. Wang, Y. Feng, J. Jin, W. Zhu, Y. Tang, W. Xu, T. Huang, D. Eu, in Proceedings of SPIE 5316, p. 332 (2004)Google Scholar
- 18.S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995)Google Scholar