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Influence of substrate and Ar/N2 gas flow ratio on structural, optical and electrical properties of TiN thin films synthetized by DC magnetron sputtering

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Abstract

Titanium nitride (TiN) thin films have been prepared by direct-current reaction magnetron sputtering technique on different substrates (glass and Si) and the influence of substrate and Ar/N2 gas flow ratio on structural, optical and electrical properties of TiN thin films were discussed. X-ray diffraction suggested that with the ratio of Ar/N2 decreasing, the diffraction intensity of (111) plane gradually diminished while (200) plane increased and films on Si substrate exhibited better crystalline quality than glass substrate. Improvement of Ar/N2 ratio is contribute to enhance the deposition rate and the obvious surface roughness were observed when the ratio up to 49. Photoluminescence spectra showed that TiN films on Si substrate showed higher intrinsic emission and lower defect emission. Moreover, the resistivity of TiN films showed obviously decreasing as the flow rate ratio of Ar/N2 increased, especially films on Si substrate.

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Acknowledgements

This work was supported by Natural Science Foundation of China (NSFC) No. 11675029 and Sichuan Province Science and Technology Program No. 2015GZ0194 and No. 2016FZ0018.

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Authors and Affiliations

  1. College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu, 610225, People’s Republic of China

    Peng Gu, Xinghua Zhu, Jitao Li, Haihua Wu & Dingyu Yang

  2. College of Intelligent Manufacturing, Sichuan University of Arts and Science, Dazhou, 635002, People’s Republic of China

    Xinghua Zhu

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  1. Peng Gu
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Correspondence to Dingyu Yang.

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Gu, P., Zhu, X., Li, J. et al. Influence of substrate and Ar/N2 gas flow ratio on structural, optical and electrical properties of TiN thin films synthetized by DC magnetron sputtering. J Mater Sci: Mater Electron 29, 9893–9900 (2018). https://doi.org/10.1007/s10854-018-9031-2

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