Journal of Materials Science: Materials in Electronics

, Volume 29, Issue 18, pp 15344–15348 | Cite as

Facile fabrication of In:Ge/Cu nano-octahedra film for improving photoelectrochemical properties

  • Yuan-chun Yu
  • Yuling Liang
  • Fuqiao Liu
  • Pei-hui Yang


The novel In:Ge/Cu nano-octahedra photoelectric film, a kind of metal-semiconductor-metal (MSM) like structures, was prepared from by a facile two-step electrodeposition process, which In:Ge and Cu nano-octahedra were successively deposited on the indium tin oxide (ITO) substrates from aqueous solution. With the modification of Cu nano-octahedral, the photoresponse and photoactive current of the In:Ge films has significantly improved 88 flods under illuminations (wavelength range: 365, 532 and 805 nm). Notably, the In:Ge/Cu nano-octahedra films exhibit excellent photoelectrochemical properties in wide wavelength range from the UV to near-infrared. This novel photoelectric film shows great potential applications in optoelectronic devices and photodetectors, and the facilely synthesis route can provide an enlightening insight for the fabrication of photoelectric devices and high-performance energy conversion systems.



The authors gratefully acknowledge the Science Fund from the National Natural Science Foundation of China (No. 21375048).

Supplementary material

10854_2018_8881_MOESM1_ESM.doc (131.3 mb)
Supplementary material 1 (DOC 134433 KB)


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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of ChemistryJinan UniversityGuangzhouChina

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