Correction to: Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based solar cell device

  • S. Vallisree
  • Anima Ghosh
  • R. Thangavel
  • T. R. Lenka
Author Correction

Correction to: Journal of Materials Science: Materials in Electronics

The original version of this article was published with the following errors. This has been corrected with this erratum.
  1. 1.

    The original article inadvertently submitted and published without the name of one of the co-author, Anima Ghosh who has contributed experimental absorption data in the author group.

  2. 2.

    Figure 3 was wrongly published with the inset figure. The inset figure of Fig. 3 has been removed.

    The corrected version of Fig. 3 and the caption is given below.

    Fig. 3

    J–V characteristics of the CZTS solar cell device

  3. 3.

    In section “2 Simulation methodology”, text below the Table 1, in the second sentence, the word “chargeollection”, should read as “charge collection”.

  4. 4.
    Equation Number 7 has incorrectly been published as
    $$\frac{{{E_r}}}{{{E_i}}}=\frac{{{n_2}~\cos ~{\theta _i} - {n_1}~\cos ~{\theta _t}}}{{{n_1}~\cos ~{\theta _i}+{n_2}~\cos ~{\theta _t}}},$$
    whereas it should be
    $$\frac{{{E_r}}}{{{E_i}}}=\frac{{{n_1}~\cos ~{\theta _i} - {n_2}~\cos ~{\theta _t}}}{{{n_1}~\cos ~{\theta _i}+{n_2}~\cos ~{\theta _t}}}.$$
  5. 5.

    In section “3 Results and discussion”, the sentence “Figure 3 shows the comparison of J–V curve with the experimental characteristics.” should read as “Figure 3 shows the J–V characteristics of the CZTS solar cell device.”

  6. 6.

    In section “3.1.1 Effect of CZTS thickness and minority carrier lifetime on the device performance”, at the end of the para, in the last sentence the word “cause” should read as “because”.

    The complete sentence is given below:

    Hence 1.5 µm may be considered as the optimum thickness of the CZTS layer at this stage, because too thick layers may lead to material wastage unless there is a considerable improvement in performance.


Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • S. Vallisree
    • 1
  • Anima Ghosh
    • 1
  • R. Thangavel
    • 1
  • T. R. Lenka
    • 2
  1. 1.Department of Applied PhysicsIndian Institute of Technology (ISM)DhanbadIndia
  2. 2.Department of Electronics and Communication EngineeringNational Institute of Technology SilcharSilcharIndia

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