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Growth of AlGaN-based multiple quantum wells on SiC substrates

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Abstract

Al0.2Ga0.8N/Al0.45Ga0.55N multiple quantum wells (MQWs) were grown on SiC substrates by metal–organic chemical vapor deposition. We studied the influence of well width and barrier width on the structural and optical properties of AlGaN MQWs in details. The MQWs structures prepared in this work all exhibited good periodicity and abrupt interfaces. When the barrier width was fixed, the thinner well was benefit to increase the integrated photoluminescence (PL) intensity of the MQWs and obtain a shorter ultraviolet wavelength. And the thicker barrier was also contributed to improve the optical properties while the well width remained the same. Compared with the effect of the well width, the emission wavelength of MQWs was less dependent on the barrier width. A 318-nm room-temperature PL emission was achieved when the well width and barrier width were 2.5 and 11 nm, respectively.

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Acknowledgements

This work was supported by the National Key Research and Development Program (No. 2016YFB0401801), the National Natural Science Foundation of China (Nos. 61674068 and 61376046), the Science and Technology Developing Project of Jilin Province (20150519004JH, 20160101309JC, 20170204045GX).

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Authors and Affiliations

  1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China

    Xu Han, Yuantao Zhang, Pengchong Li, Long Yan, Gaoqiang Deng, Liang Chen, Ye Yu & Jingzhi Yin

  2. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing, 100083, China

    Degang Zhao

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  1. Xu Han
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  2. Yuantao Zhang
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  3. Pengchong Li
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  4. Long Yan
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  5. Gaoqiang Deng
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  6. Liang Chen
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  7. Ye Yu
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  8. Degang Zhao
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  9. Jingzhi Yin
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Correspondence to Yuantao Zhang or Jingzhi Yin.

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Han, X., Zhang, Y., Li, P. et al. Growth of AlGaN-based multiple quantum wells on SiC substrates. J Mater Sci: Mater Electron 29, 7756–7762 (2018). https://doi.org/10.1007/s10854-018-8772-2

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  • DOI: https://doi.org/10.1007/s10854-018-8772-2

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