Influence of AZO amorphous structure on n-AZO/p-Cu2O heterojunction diode photoluminescence properties
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In this work two samples of Ag/Cu/Cu2O and Al:ZnO (AZO) multilayers, on glass substrates were prepared. The Ag/Cu layers were obtained by the physical vapor deposition (PVD) method, while the Cu2O and AZO layers were deposited by DC reactive magnetron sputtering. The structural and morphology properties of the considered samples were studied. The X-ray diffraction (XRD) showed that the first junction signifies a crystal structure of compounds of Ag, Cu and Cu2O, but the latter sample showed an amorphous structure. It was shown that the roughness of glass/Ag/Cu/Cu2O layers was substantially lower than the roughness of AZO layer deposited on glass substrate. In addition, the microstructure consideration revealed that the glass/Ag/Cu/Cu2O surface morphology was highly homogenous with average grain size of 35 nm. Moreover, we investigated the properties of the Cu2O/AZO heterojunction. The low turn-on voltage of about 0.64 V was obtained, which indicate that the heterojunction acts as a rectifier diode. The ideality factor was determined to be 10.28.
KeywordsCu2O Ideality Factor Surface Resistivity Heterojunction Diode Shallow Donor Level
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The authors report no conflict of interests. The authors alone are responsible for the content and writing of the paper.
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