Effect of neodymium doping on structural, electrical and magnetic properties of multiferroic GdMn2O5
- 138 Downloads
Neodymium doped gadolinium manganate with general composition (Nd0.1Gd0.9Mn2O5) was prepared by co-precipitation method. Microstructural and compositional analysis has been carried out by X-ray diffraction and scanning electron microscopy. The optical studies have been carried out by Raman and FTIR. The electrical properties studied include dielectric constant, dielectric loss, ac conductivity and activation energy in the temperature range 20–400 °C. The shift in the dielectric peak towards higher temperature side with increasing frequency indicates frequency dispersion and suggesting the relaxational behaviour of the material. Frequency dependence of ac conductivity obeys the universal power law. The value of activation energy depends on increase in frequency. The room temperature magnetic behaviour has been analyzed from the magnetic field dependent magnetization curve. The grown material exhibits the paramagnetic behavior at room temperature.
KeywordsDielectric Constant Dielectric Loss Neodymium Dielectric Anomaly High Temperature Side
One of the authors, Dr. Deepa Singh is thankful to Department of Science & Technology, Government of India for awarding Women Scientist vide No.: SR/WOS-A/PS-59/2012 (G). The authors would like to acknowledge Sophisticated Test and Instrumentation Centre (STIC) Cochin University for providing XRD and SEM facilities. The authors would also like to acknowledge SAIIF- IIT Madras for providing VSM facility.
- 8.C.L. Lu, J. Fan, H.M. Liu, K.F. Xia K, Wang, Wang P W, He Q Y, Yu D P & Liu J M. Appl Phys A 96, 991 (2009)Google Scholar
- 12.N. Hur, S. Park, P.A. Sharma, J.S. Ahn, S. Guha, S.-W. Cheong, Nature, 429 (2004) 392. Google Scholar
- 20.Y.B. Kannan, R. Saravanan, N. Srinivasan, Praveena K & Sadhana K, J, Mater Sci: Mater Electron 27, 12000 (2016)Google Scholar
- 23.Cullity B D & Stock S R, Elements of X-Ray Diffraction, (3rd ed., Prentice-Hall, Englewood ciffs), 20012001Google Scholar
- 30.Goodman G, Buchanan R C & Reynolds III T G Buchanan R C (Ed.), Ceramic Materials for Electronics: Processing Properties and Applications, (Marcel Dekker Inc., New York 32), 1991.Google Scholar
- 31.Levin I, Chan J Y, Maslar J E & Vanderah T A, J Appl Phys 90  (2001) 904.Google Scholar
- 32.Mahato D K, Dutta A & Sinha T P, Physica B Condensed Matter, 406  (2011) 2703.Google Scholar
- 36.Le Meins J M and Bohnke O and Courbion G 1998 Solid State Ionics 111 67.Google Scholar
- 42.Long A R, Hopping Transport in Solid, (North-Holland, Amsterdam) 1991.Google Scholar