Influence of HVP trimming on primary parameters of thick resistive films

  • Ivanka Stanimirović
  • Zdravko Stanimirović


The revival of thick-film technology can be attributed to increasing use of ceramic MEMS devices. Thick-film resistors that are being used both as sensing and as resistive elements are facing reduction in dimensions, higher required tolerances and increasing use of buried components. For these reasons standard trimming procedures are being replaced by an alternative method—trimming by energy of high-voltage pulses (HVP trimming). Aim of this paper is to determine primary geometrical, physical and technological parameters responsible for resistance and noise index changes in thick resistive films caused by this alternative trimming method. Both theoretical and experimental considerations are taken into account using three groups of resistors based on commercially available 1, 10 and 100 kΩ/sq thick-film resistor compositions that were subjected to a series of pulses with increasing amplitudes in such a manner that resistance values gradually changed. Possible causes of observed micro and macro structural changes are determined using presented evaluation method resulting in defining primary parameters responsible for reported behavior.


Sheet Resistance Primary Parameter Metallic Conduction Potential Barrier Height Noise Index 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This research was partially funded by Ministry for Education, Science and Technological Development of the Republic of Serbia under contracts III44003 and III45007.


  1. 1.
    A. Dziedzic, L.J. Golonka, J. Kita, H. Roguszczak, T. Zdanowicz, Proc. 1st European Microelectron. and Packaging Symp. (Prague, Czech Republic, 2000), pp. 194–199Google Scholar
  2. 2.
    I. Stanimirović, M.M. Jevtić, Z. Stanimirović, Microelectron Reliab. 43, 905 (2003)CrossRefGoogle Scholar
  3. 3.
    I. Stanimirović, M.M. Jevtić, Z. Stanimirović, Microelectron Reliab. 47, 2242 (2007)CrossRefGoogle Scholar
  4. 4.
    Z. Stanimirović, M.M. Jevtić, I. Stanimirović, Microelectron Reliab. 48, 59 (2008)CrossRefGoogle Scholar
  5. 5.
    C. Grimaldi, T. Maeder, S. Strassler, J. Phys. D 37, 2170 (2004)CrossRefGoogle Scholar
  6. 6.
    A. Dziedzic, A. Kolek, W. Ehrhardt, H. Thust, Microelectron Reliab. 46, 352 (2006)CrossRefGoogle Scholar
  7. 7.
    B. RamBabu, K.V. Subramaniumb, B. Poornaiahb, Y. Srinivasa Rao, Procedia Mater. Sci. 6, 1083 (2014)CrossRefGoogle Scholar
  8. 8.
    Z. Stanimirović, I. Stanimirović, Sci. Sinter., Accessed March 03, 2016Google Scholar
  9. 9.
    M.M. Jevtić, Z. Stanimirović, I. Stanimirović, Microelectron Reliab. 41, 59 (2001)CrossRefGoogle Scholar
  10. 10.
    I. Stanimirović, M.M. Jevtić, Z. Stanimirović, Proc. 26th Int. Conf. on Microelectron. MIEL, (Niš, Serbia, 2008) pp. 571–574Google Scholar
  11. 11.
    M. Hrovat, D. Belavič, Z. Samardžija, J. Holc, J. Mater. Sci. 36, 2679 (2001)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  1. 1.Institute for Telecommunications and Electronics IRITEL a.d. BeogradBelgradeRepublic of Serbia

Personalised recommendations