Abstract
Bismuth titanate ferroelectric ceramics (BiT) compensated(doped) by 3 mol% of Bi3+ or Ln3+ (BiT–Bi, BiT–Ln; Ln = La, Nd, Sm) were synthesized by conventional solid-state reaction, then the effects of compensation towards the lattice structure as well as the ferroelectric properties were studied. Rietveld refinement of the structure confirmed the pure Aurivillius phase with space group B2cb in all the constituents, however the trace amount of Bi2O3 and Ln2O3 could also act as sintering aids during sintering. The 6s 2 lone pair electrons of Bi3+ in perovskites localize into a lobe shape and the lobes major axis prefer to align along the a-axis, resulting the Bi3+ in perovskites showing a smaller effective radius compared with Ln3+ and causing higher lattice distortion. In addition, the paraelectric–ferroelectric phase transition temperature (Curie temperature, T c ), piezoelectric coefficient (d 33), spontaneous polarization (P s ), a.c. conductivity [σ(ω)] and activation energy of dielectric relaxation (E a ) increase with decreasing A-site cation radius. Furthermore, ferroelectric polarization and electromechanical properties of the BiT–Bi were enhanced dramatically due to the oxygen vacancies suppression by the compensation, which was confirmed by electric modulus approach.
Similar content being viewed by others
References
J. Rödel, W. Jo, K.T.P. Seifert, E.M. Anton, T. Granzow, D. Damjanovic, J. Am. Ceram. Soc. 92, 1153 (2009)
J. Rödel, K.G. Webber, R. Dittmer, W. Jo, M. Kimura, D. Damjanovic, J. Eur. Ceram. Soc. 35, 1659 (2015)
Y. Saito, H. Takao, T. Tani et al., Nature 432, 84 (2004)
J. Bennett, A.J. Bell, T.J. Stevenson, T.P. Comyn, Scr. Mater. 68, 491 (2013)
A.J. Bell, J. Eur. Ceram. Soc. 28, 1307 (2008)
F. Zhu, T.A. Skidmore, A.J. Bell et al., Mater. Chem. Phys. 129, 411 (2011)
G. Stone, D. Lee, H. Xu, S.R. Phillpot, V. Dierolf, Appl. Phys. Lett. 102, 042905 (2013)
K. Li, X.L. Zhu, X.Q. Liu, X.M. Chen, Appl. Phys. Lett. 100, 012902 (2012)
B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee, W. Jo, Nature 401, 682 (1999)
R.E. Newnham, R.W. Wolfe, J.F. Dorrian, Mater. Res. Bull. 6, 1029 (1971)
D. Damjanovic, Rep. Prog. Phys. 61, 1267 (1998)
Y.Y. Yao, C.H. Song, P. Bao et al., J. Appl. Phys. 95, 3126 (2004)
U. Chon, K.-B. Kim, H.M. Jang, G.C. Yi, Appl. Phys. Lett. 79, 3137 (2001)
U. Chon, H.M. Jang, M.G. Kim, C.H. Chang, Phys. Rev. Lett. 89, 087601 (2002)
X.J. Zheng, L. He, M.H. Tang, Y. Ma, J.B. Wang, Q.M. Wang, Mater. Lett. 62, 2876 (2008)
Y. Shimakawa, Y. Kubo, Y. Nakagawa, T. Kamiyama, H. Asano, F. Izumi, Appl. Phys. Lett. 74, 1904 (1999)
A.C. Larson., R.B.V. Dreele., Los Alamos National Laboratory Report LAUR 86 (1994)
L.B. McCusker, R.B. Von Dreele, D.E. Cox, D. Louer, P. Scardi, J. Appl. Crystallogr. 32, 36 (1999)
C. Long, H. Fan, M. Li, G. Dong, Q. Li, Scr. Mater. 75, 70 (2014)
C.H. Hervoches, P. Lightfoot, Chem. Mater. 11, 3359 (1999)
J.P. Guha, D.J. Hong, H.U. Anderson, J. Am. Ceram. Soc. 71, 152 (1988)
M.D. Maeder, D. Damjanovic, N. Setter, J. Electroceram. 13, 385 (2004)
H.S. Shulman, D. Damjanovic, N. Setter, J. Am. Ceram. Soc. 83, 528 (2000)
R.T. Shannon, Acta Crystallogr. Sec. A 32, 751 (1976)
D.Y. Suarez, I.M. Reaney, W.E. Lee, J. Mater. Res. 16, 3139 (2001)
Y. Shimakawa, Y. Kubo, Y. Nakagawa et al., Phys. Rev. B 61, 6559 (2000)
R. Wolfe, R. Newnham, J. Electrochem. Soc. 116, 832 (1969)
A. Sleight, G. Jones, Acta Crystallogr. Sect. B Struct. Sci. 31, 2748 (1975)
E.C. Subbarao, Integr. Ferroelectr. 12, 33 (1996)
P. Fang, H. Fan, Z. Xi et al., J. Alloys Compd. 550, 335 (2013)
R. Seshadri, G. Baldinozzi, C. Felser, W. Tremel, J. Mater. Chem. 9, 2463 (1999)
R. Seshadri, N.A. Hill, Chem. Mater. 13, 2892 (2001)
L. Shimoni-Livny, J.P. Glusker, C.W. Bock, Inorg. Chem. 37, 1853 (1998)
R.A. Armstrong, R.E. Newnham, Mater. Res. Bull. 7, 1025 (1972)
Y. Shimakawa, Y. Kubo, Y. Tauchi et al., Appl. Phys. Lett. 79, 2791 (2001)
C. Elissalde, J. Ravez, J. Mater. Chem. 11, 1957 (2001)
W. Li, K. Chen, Y. Yao, J. Zhu, Y. Wang, Appl. Phys. Lett. 85, 4717 (2004)
V.K. Seth, W.A. Schulze, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 36, 41 (1989)
O. Bidault, P. Goux, M. Kchikech, M. Belkaoumi, M. Maglione, Phys. Rev. B 49, 7868 (1994)
Y. Kitanaka, Y. Noguchi, M. Miyayama, Phys. Rev. B 81, 094114 (2010)
S. Teranishi, M. Suzuki, Y. Noguchi et al., Appl. Phys. Lett. 92, 182905 (2008)
U. Robels, G. Arlt, J. Appl. Phys. 73, 3454 (1993)
S.M. Ke, H.T. Huang, H.Q. Fan, H.K. Lee, L.M. Zhou, Y.-W. Mai, Appl. Phys. Lett. 101, 082901 (2012)
R.-A. Eichel, P. Erhart, P. Träskelin, K. Albe, H. Kungl, M.J. Hoffmann, Phys. Rev. Lett. 100, 095504 (2008)
L. Liu, M. Wu, Y. Huang, Z. Yang, L. Fang, C. Hu, Mater. Chem. Phys. 126, 769 (2011)
W.L. Warren, G.E. Pike, K. Vanheusden, D. Dimos, B.A. Tuttle, J. Robertson, J. Appl. Phys. 79, 9250 (1996)
M.M. Kumar, Z.G. Ye, J. Appl. Phys. 90, 934 (2001)
Acknowledgements
This work was supported by the National Natural Science Foundation (51672220), the 111 Program (B08040) of MOE, the National Defense Science Foundation (32102060303), and the Fundamental Research Funds for the Central Universities (3102014JGY01004) of China.
Author information
Authors and Affiliations
Corresponding author
Electronic supplementary material
Below is the link to the electronic supplementary material.
Rights and permissions
About this article
Cite this article
Chang, Q., Fan, H. & Long, C. Effect of isovalent lanthanide cations compensation for volatilized A-site bismuth in Aurivillius ferroelectric bismuth titanate. J Mater Sci: Mater Electron 28, 4637–4646 (2017). https://doi.org/10.1007/s10854-016-6102-0
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-016-6102-0