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Proton implantation effect on CdSe nanowires

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Abstract

Semiconducting nanowires represent an exclusive system for analyzing phenomena at the nanoscale and are also believed to play an important role in future nanoscale electronic and optoelectronic devices. The one dimensional nanostructures bring about significant alterations in their properties on implantation; depending on the energy, dose and fluence of the bombarding ions. In this view, effects of implantation with 250 keV protons on structural, optical and electrical properties of CdSe nanowires of 80 nm were studied for different fluencies. Implantation led to substantial change in the electrical conductivity at various fluencies as compared to pristine which may be attributed to the ionization effects. A drop in conductivity value above fluence of 1012 ions/cm2 may be ascribed to the passivation of some donor levels due to the presence of hydrogen. The optical band gap was also found to vary with implantation. This study opens up new avenues for research to modulate opto-electronic properties of CdSe nanowires for the novel device applications.

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Acknowledgments

One of the authors (Chetna Narula) is thankful to MHRD, Government of India, New Delhi, for providing financial support in terms of fellowship. The authors wish to acknowledge the Director, IUAC, New Delhi, for providing Low Energy Ion Beam Facility. Authors also acknowledge NIT Kurukshetra, India for SEM and XRD facilities and SAI Lab, Thapar University, Patiala, India for providing EDS facility.

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  1. Department of Physics, National Institute of Technology, Kurukshetra, 136119, India

    Chetna Narula & R. P. Chauhan

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  1. Chetna Narula
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Correspondence to Chetna Narula.

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Narula, C., Chauhan, R.P. Proton implantation effect on CdSe nanowires. J Mater Sci: Mater Electron 28, 3175–3184 (2017). https://doi.org/10.1007/s10854-016-5906-2

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