Thin films of AgIn5(S/Se)8 prepared in a two stage process
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AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8−xSex alloy was achievable through the post-deposition treatment at 350 and 400 °C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value E g for the films was found to be as the order of 1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of 6.6 × 10−6 (Ω cm)−1 and thermoelectric power of +18 µV/K.
KeywordsSpark Plasma Sinter Seebeck Coefficient Optical Absorption Coefficient Chemical Bath Deposition Ag2Se
We acknowledge the financial support of CONACYT through Project 229711, CONACYT-LIFYCS-123122 and CeMIE-Sol project 35 for using SEM and XRD. The authors strongly appreciate the technical assistance of Patricia Altuzar Coello and Oscar Gómez Daza from IER-UNAM, for XRD measurements and technical assistance, respectively. Student Adriana Gómez was involved in sample preparation.
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