Thin films of AgIn5(S/Se)8 prepared in a two stage process

  • Sarah Messina
  • Y. Rodríguez-Lazcano
  • J. Campos
  • Y. Peña
  • E. Barrios-Salgado


AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8−xSex alloy was achievable through the post-deposition treatment at 350 and 400 °C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value E g for the films was found to be as the order of 1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of 6.6 × 10−6 (Ω cm)−1 and thermoelectric power of +18 µV/K.


Spark Plasma Sinter Seebeck Coefficient Optical Absorption Coefficient Chemical Bath Deposition Ag2Se 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



We acknowledge the financial support of CONACYT through Project 229711, CONACYT-LIFYCS-123122 and CeMIE-Sol project 35 for using SEM and XRD. The authors strongly appreciate the technical assistance of Patricia Altuzar Coello and Oscar Gómez Daza from IER-UNAM, for XRD measurements and technical assistance, respectively. Student Adriana Gómez was involved in sample preparation.


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Sarah Messina
    • 1
  • Y. Rodríguez-Lazcano
    • 1
  • J. Campos
    • 2
  • Y. Peña
    • 3
  • E. Barrios-Salgado
    • 1
  1. 1.Universidad Autónoma de NayaritTepicMexico
  2. 2.Instituto de Energías RenovablesUniversidad Nacional Autónoma de MéxicoTemixcoMexico
  3. 3.Facultad de Ciencias QuímicasUniversidad Autónoma de Nuevo LeónSan Nicolás de Los GarzaMexico

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