Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors
Nitrogen-doped p-type ZnTe nanowires were successfully synthesized by a chemical vapor deposition method. Schottky junctions based on Au/ZnTe NW/In structure were constructed and their device performances were studied. ZnTe/In Schottky junction devices show excellent rectifying characteristics with rectification ratio up to 103 within ±5 V. Photoresponse analysis reveals that such devices were highly sensitive to varying optical signal with excellent stability, reproducibility and fast response speeds of 69/120 μs. These results demonstrate that ZnTe/In Schottky junction devices will promote the applications of ZnTe 1D nanostructures in electronic and optoelectronics.
KeywordsZnTe Schottky Barrier Ideality Factor Schottky Diode Rectification Ratio
This work was supported by financial support from the National Natural Science Foundation of China (Nos. 61605174 and 11504331), the China Postdoctoral Science Foundation (No. 2015M582194), Educational Department of Henan Province (No. 17A140012) and Startup Research Fund of Zhengzhou University (1512317002).
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