Journal of Materials Science: Materials in Electronics

, Volume 27, Issue 12, pp 13288–13293 | Cite as

Effect of sintering temperature on the crystallization behavior and properties of silica filled PTFE composites

  • Ying Yuan
  • Dingding Yu
  • Yuting Yin
  • Bin Tang
  • Enzhu Li
  • Shuren Zhang


The present study investigated the effect of sintering temperature on the crystallization behavior of polytetrafluoroethylene (PTFE) polymer in SiO2 filled PTFE (PTFE/SiO2) composites, as well as the dependences of dielectric properties, thermal conductivity, water absorption and density on the sintering temperature of composites. The composites were sintered by hot pressing at temperatures of 350–390 °C. The melting peaks of the sintered composites were recorded by the differential scanning calorimetry (DSC), and heats of melting were calculated from the peak areas in DSC curves, then the crystallinity of PTFE in composites was deduced. The intensities of the crystal diffraction peak for PTFE were observed by X-ray diffraction analysis. Moisture absorption of the composites was measured conforming to IPC-TM-650 2.6.2. Archimedes’ principle was used to find out the density of the composites. The dielectric constant and loss tangent of the composites were evaluated at microwave frequency region using strip line resonator method according to IPC-TM-650 specification. Thermal conductivity was measured by laser thermal conductivity meter. Morphology of PTFE crystals and dispersion of fillers in the PTFE matrix were studied using scanning electron microscopy.


Sinter Temperature PTFE Differential Scanning Calorimetry Curve Loss Tangent Moisture Absorption 
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This work has been supported by the Fundamental Research Funds for the Central Universities of China (No. ZYGX2012J035).


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.National Engineering Research Center of Electromagnetic Radiation Control MaterialsUniversity of Electronic Science and Technology of ChinaChengduPeople’s Republic of China
  2. 2.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengduPeople’s Republic of China

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