Abstract
Beta-gallium oxide/Aluminum-doped zinc oxide (β-Ga2O3/AZO) multilayered films consisting of three bilayers of 100-nm β-Ga2O3 and 400-nm AZO have been successfully prepared on sapphire substrates by magnetron sputtering. The microstructure of the β-Ga2O3/AZO film is investigated in detail using X-ray diffractometer, scanning electron microscope, Energy Dispersive Spectrometer, Hall measurement system and UV–Vis–NIR spectrophotometer. It is found that the optical and electronic properties of the films are manipulated by the annealing temperature. The films annealed at 800 °C exhibit the best properties with the out-of-plane orientation of ZnO (001)||Al2O3 (0001). The Hall mobility of this film is 14.47 cm2 V−1 s−1 and the average transmittance is about 94 %. The optical band gap is 3.25 eV. These results indicate that the β-Ga2O3/AZO multilayered films are appealing candidate for photoelectric device applications.
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Y.F. He, P.G. Tang, J. Li, J.J. Zhang, F.Y. Fan, D.Q. Li, Ultrafast response and recovery ethanol sensor based on SnO2 quantum dots. Mater. Lett. 165, 50–54 (2016)
H. Yang, S. Wang, Y. Yang, Fabrication of metallic ions doped monodispersed porous In2O3 nanospheres. Mater. Lett. 110, 45–48 (2013)
H. Maryama, A. Abbassi, Comparative study of accurate experimentally determined and calculated band gap of amorphous ZnO layers. Mater. Lett. 166, 206–209 (2016)
M. Ramezani, S.M. Hosseinpour-Mashkani, A. Sobhani-Nasab, H.G. Estarki, J. Mater. Sci. Mater. Electron. 26, 7588–7594 (2015)
Y. Cheng, H. Liang, X. Xia, R. Shen, Y. Liu, Y. Luo, G. Du, Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (1 0 0) substrates by MOCVD method. Appl. Surf. Sci. 325, 258–261 (2015)
O. Masahiro, H. Hidenori, O. Hiromichi, H. Masahiro, H. Hideo, Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures. Thin Solid Film 411, 134–139 (2002)
X.H. Wang, J.Q. Situ, X.Y. Ying, H. Chen, H.F. Pan, Y. Jin, Y.Z. Du, β-Ga2O3:Cr3+ nanoparticle: a new platform with near infrared photoluminescence for drug targeting delivery and bio-imaging simultaneously. Acta Biomater. 22, 164–172 (2015)
J.H. Yun, N. Duraisamy, M.M.D. Kumar, J. Kim, Optical and electrical properties of AZO/Ni/ITO transparent conductor. Mater. Lett. 143, 215–218 (2015)
J.F. Tang, Y.M. Lu, S.Y. Chun, The growth of AZO nanostructures with high doping concentration using vertical reaction layer synthesizing method and their applications. Sens. Actuat B-Chem. 225, 327–333 (2016)
R. Dhahri, M. Hjiri, L.E. Mir, E. Fazio, F. Neri, F.J. Barreca, ZnO: Ca nanopowders with enhanced CO2 sensing properties. Phys. D Appl. Phys. 48, 255503 (2015)
M. Fahland, P. Karlsson, C. Charton, Low resisitivity transparent electrodes for displays on polymer substrates. Thin Solid Films 392, 334–337 (2001)
A. Goyal, B.S. Yadav, O.P. Thakur, A.K. Kapoor, R.J. Muralidharan, Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique. J. Alloys Compd. 583, 214–219 (2014)
S.K. HongK, H.J. Ko, Y. Chen, T. Hanada, T. Yao, Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3. Appl. Surf. Sci. 159, 441–448 (2000)
X.J. Feng, Z. Li, W. Mi, J. Ma, Effect of annealing on the properties of Ga2O3: Mg films prepared on α-Al2O3 (0001) by MOCVD. Vacuum 124, 101–107 (2016)
B. Ayachi, T. Aviles, J.P. Vilcot, C. Sion, Rapid thermal annealing effect on the spatial resistivity distribution of AZO thin films deposited by pulsed-direct-current sputtering for solar cells applications. Appl. Surf. Sci. 366, 53–58 (2016)
Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, H.D. Xiao, Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique. Vacuum 86, 1850–1854 (2012)
G. Mills, Z.G. Li, M. Dan, Photochemistry and spectroscopy of colloidal arsenic sesquisulfide. J. Phys. Chem. 92, 822–828 (1988)
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This work is supported by the National Natural Science Foundation of China (Grant No. 51502203).
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Mi, W., Zhang, K., Zhao, J. et al. Annealing effect on the optical and electronic properties of β-Ga2O3/AZO multilayered films. J Mater Sci: Mater Electron 27, 11390–11395 (2016). https://doi.org/10.1007/s10854-016-5264-0
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DOI: https://doi.org/10.1007/s10854-016-5264-0