Skip to main content
Log in

Vertically aligned silicon nanowires with rough surface and its NO2 sensing properties

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Vertically aligned array of silicon nanowires (SiNWs) with rough surface was demonstrated to be a promising material for high performance gas sensor applications. A two-step etching process, i.e. metal-induced chemical etching followed by the back-etching of KOH was developed to prepare the rough SiNWs array. The roughness of SiNWs effectively increases the active surface area as evidence that the measured BET specific area is ten times larger than that of the smooth nanowires without KOH etching. Meanwhile, the nanowire diameter and distribution density are also decrease due to KOH etching. The high active surface area and loose configuration of the rough SiNWs array are favorable for gas adsorption and rapid gas diffusion. As a result, the sensor based on the rough SiNWs array exhibits high response, good stability and satisfying response–recovery characteristics in detection of NO2 in ppb–ppm level at room temperature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8

Similar content being viewed by others

References

  1. B.R. Huang, Y.K. Yang, T.C. Lin, Sol. Energy Mater. Sol. Cells 98, 357–362 (2012)

    Article  Google Scholar 

  2. C. Li, G. Fang, S. Sheng, Physica E 30, 169–173 (2005)

    Article  Google Scholar 

  3. N. Shehada, G. Brönstrup, K. Funka, Nano Lett. 2015(15), 1288–1295 (2015)

    Article  Google Scholar 

  4. O. Gunawan, S. Guha, Sol. Energy Mater. Sol. Cells 93, 1388–1393 (2009)

    Article  Google Scholar 

  5. A.M. Morales, C.M. Lieber, Science 279, 208–211 (1998)

    Article  Google Scholar 

  6. C.M. Hsu, S.T. Connor, M.X. Tang, Appl. Phys. Lett. 93, 133109 (2008)

    Article  Google Scholar 

  7. H.J. In, C.R. Field, P.E. Pehrsson, Nanotechnology 22, 355501 (2011)

    Article  Google Scholar 

  8. Z.P. Huang, N. Geyer, P. Werner, J. de Boor, U. Gösele, Adv. Mater. 23, 285–308 (2011)

    Article  Google Scholar 

  9. X.J. Huang, Y.K. Choi, Sens. Actuators, B 122, 659–671 (2007)

    Article  Google Scholar 

  10. X. Zou, H. Fan, Y. Tian, M. Zhang, X. Yan, Dalton Trans. 44, 7811–7821 (2015)

    Article  Google Scholar 

  11. P. Li, H. Fan, Y. Cai, M. Xu, C. Long, M. Li, S. Lei, X. Zou, RSC Advances 4, 15161–15170 (2014)

    Article  Google Scholar 

  12. D. Meng, N.M. Shaalan, T. Yamazaki, T. Kikuta, Sens. Actuators, B 169, 113–120 (2012)

    Article  Google Scholar 

  13. Y. Qin, X. Li, F. Wang, M. Hu, J. Alloys Compd. 509, 8401–8406 (2011)

    Article  Google Scholar 

  14. B.R. Huang, Y.K. Yang, H.L. Cheng, Nanotechnology 24, 475502 (2013)

    Article  Google Scholar 

  15. Y. Qin, M. Hu, J. Zhang, Sens. Actuators, B 150, 339–345 (2010)

    Article  Google Scholar 

  16. T. Qiu, X.L. Wu, J.C. Shen, P.C.T. Ha, P.K. Chu, Nanotechnology 17, 5769–5772 (2006)

    Article  Google Scholar 

  17. K.Q. Peng, X. Wang, S.T. Lee, Appl. Phys. Lett. 95, 243112 (2009)

    Article  Google Scholar 

  18. S.S. Badadhe, I.S. Mulla, Sens. Actuators, B 143, 164–170 (2009)

    Article  Google Scholar 

  19. E. Rossinyol, A. Prim, E. Pellicer, J. Arbiol, F. Hernández-Ramírez, F. Peiró, A. Cornet, J.R. Morante, L.A. Solovyov, B. Tian, T. Bo, D. Zhao, Adv. Funct. Mater. 17, 1801–1806 (2007)

    Article  Google Scholar 

Download references

Acknowledgments

This work was financially supported by the National Natural Science Foundation of China (Nos. 61574100, 61274074, 61271070).

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Yuxiang Qin.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Qin, Y., Wang, Y. & Liu, Y. Vertically aligned silicon nanowires with rough surface and its NO2 sensing properties. J Mater Sci: Mater Electron 27, 11319–11324 (2016). https://doi.org/10.1007/s10854-016-5255-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-016-5255-1

Keywords

Navigation