Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range
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Highly transparent Ga doped ZnO thin films were prepared on (0001) sapphire substrates by pulsed laser deposition. Hall-effect measurement reveals that electron concentration of the ZnO films can be controlled between 1018 and 1021 cm−3 by adjusting Ga contents in the targets. Optical measurements show the transmittance is above 60 % in the near-infrared wavelength region for all Ga doped ZnO films. Meanwhile, these films also have high crystal quality and smooth surface when the electron concentration up to 1021 cm−3, suggesting that the Ga doped ZnO is a promising material for using as transparent electrode for near infrared optoelectronic devices.
KeywordsSapphire Substrate Transparent Conductive Oxide Force Constant Change Transparent Conductive Oxide Thin Film Transparent Conductive Oxide Electrode
This work was partially supported by the Partnership Project for Fundamental Technology Research of Ministry of Education, Culture, Sports, Science, and Technology, Japan.