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Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range

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Abstract

Highly transparent Ga doped ZnO thin films were prepared on (0001) sapphire substrates by pulsed laser deposition. Hall-effect measurement reveals that electron concentration of the ZnO films can be controlled between 1018 and 1021 cm−3 by adjusting Ga contents in the targets. Optical measurements show the transmittance is above 60 % in the near-infrared wavelength region for all Ga doped ZnO films. Meanwhile, these films also have high crystal quality and smooth surface when the electron concentration up to 1021 cm−3, suggesting that the Ga doped ZnO is a promising material for using as transparent electrode for near infrared optoelectronic devices.

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Acknowledgments

This work was partially supported by the Partnership Project for Fundamental Technology Research of Ministry of Education, Culture, Sports, Science, and Technology, Japan.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga, 840-8502, Japan

    Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio & Qixin Guo

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  1. Zhengwei Chen
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  2. Katsuhiko Saito
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  3. Tooru Tanaka
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  4. Mitsuhiro Nishio
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  5. Qixin Guo
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Correspondence to Qixin Guo.

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Chen, Z., Saito, K., Tanaka, T. et al. Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range. J Mater Sci: Mater Electron 27, 9291–9296 (2016). https://doi.org/10.1007/s10854-016-4968-5

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  • DOI: https://doi.org/10.1007/s10854-016-4968-5

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