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Journal of Materials Science: Materials in Electronics

, Volume 27, Issue 9, pp 9067–9072 | Cite as

Effect of Si on near-infrared long persistent phosphor Zn3Ga2Ge2−x Si x O10:2.5 %Cr3+

  • Fengjuan Shen
  • Chaoyong Deng
  • Xu Wang
  • Chi Zhang
  • Wei Liu
Article

Abstract

Advanced long persistent near-infrared phosphors Zn3Ga2Ge2−xSixO10:2.5 %Cr3+ (x = 0, 0.6, 1, 1.4, 2) were synthesized by solid-state reaction method. The duration of afterglow can last more than 30 h after stoppage of the 365 nm ultraviolet light irradiation. Specifically, Si4+ substituting Ge4+ can increase the afterglow time but attenuate light emission intensity by introducing deep level of traps. We discussed the mechanism to balance the persistent luminescence intensity and afterglow time, which has significant potential for applications and future research of super long bright persistent luminescence phosphors.

Keywords

Deep Trap SrAl2O4 Zn2SiO4 Germanium Dioxide Zn2GeO4 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

This work is supported by the National Natural Science Fund of China (No.51462003, No.61404033) and Science Research Fund of Guizhou Province, China (Nos. 2013-7012).

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.Department of Electronic Science, College of Big Data and Information EngineeringGuizhou UniversityGuiyangChina
  2. 2.School of Electrical and Electronic EngineeringChongQing University of Arts and ScienceChongqingChina

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