Dark electrical properties and photovoltaic performance of organic/inorganic (SnPcCl2/p-Si) solar cells
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A film of SnPcCl2 was deposited by thermal evaporation on p-Si single crystal substrate to fabricate an organic/inorganic n-SnPcCl2/p-Si heterojunction. Electrical properties of the fabricated cell were investigated by performing the measurements of capacitance–voltage (C–V) and current density–voltage (J–V) measurements. The fabricated cell was characterized by a contact barrier of 0.55 eV and a rectification ratio of 229, calculated at ±1 V. The dark J–V measurements suggested that the forward current in this junction involves thermionic mechanisms, while at relatively high applied voltage; a space-charge limited current mechanism was operated. The photovoltaic conversion properties of the junction were also studied by carrying out the I–V measurements under illumination of 100 mW cm−2 and power conversion efficiency of 3.05 % has been achieved. The other cell parameters, the short-circuit current density J sc, the open-circuit voltage V oc and the fill factor FF, were determined at room temperature to be 14.43 mA/cm2, 0.50 V and 0.422 respectively. The temperature-dependence of these parameters was also investigated in the temperature range of 300–380 K.
KeywordsSolar Cell Power Conversion Efficiency Conduction Band Edge Rectification Ratio Organic Thin Film
The authors are grateful to Prof. M. M. El-Nahass, Ain Shams University, for his support.
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