Abstract
We have prepared three kinds of graphene heat dissipation film as non-continuous single layer single-crystal graphene (NCSG), continuous single layer graphene (CSG) and continuous double layer graphene (CDG). Then graphene was transferred on 2-inches SiO2/Si substrate as heat dissipation film. Temperature field distribution was tested by infrared camera, and thermal conductivity of composite interface of heat dissipation film on SiO2/Si was studied using Fourier’s law. When supply voltage was 10 V, NCSG film made the center temperature dropped by 1 °C, and CSG made the central temperature dropped by 6 °C and the thermal conductivity of CSG on SiO2/Si was increased by 15.7 %. For CSG on SiO2/Si, with the increased of supply voltage, the center temperature drop was increased, but the improvement of thermal conductivity was decreased.
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Acknowledgments
This work was financially supported by grants from the National Natural Science Foundation of China (Nos. 91123018, 61172040, 61172041), Shaanxi Natural Science Foundation (2014JM7277), and the Fundamental Research Funds for the Central Universities. Some SEM work was done at International Center for Dielectric Research (ICDR), Xi’an Jiaotong University, Xi’an, China; Authors also thank Ms. Dai and Mr. Yang for their help in using SEM.
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Li, X., Fang, M., Wang, W. et al. Graphene heat dissipation film for thermal management of hot spot in electronic device. J Mater Sci: Mater Electron 27, 7715–7721 (2016). https://doi.org/10.1007/s10854-016-4758-0
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DOI: https://doi.org/10.1007/s10854-016-4758-0