Fabrication and characterization of fast response pyroelectric sensors based on Fe-doped PZT thin films

  • Farhad Fouladi
  • Ehsan Javid
  • Yousef Seyed Jalili


Pyroelectric IR-detectors based on Pb(1−y)Fey(Zrx,Ti(1−x))O3 thin film have been successfully fabricated via ex situ oxidization annealing of DC magnetron sputtered conductive Fe doped lead-zirconium-titanium thin film on Au/SiO2/Si substrates. Structural as well as electro-optical properties were characterized. The results indicate that Fe-doping has had a remarkable structural effect namely, grain-size reduction, enhanced device voltage responsivity, 67.23 mV/mJ, and current-sensitivity, 5.16 × 10−6 mA/mJ. Moreover the pyroelectric coefficient, 609 μC m−2 °C−1, and merit figure, 1.43 × 10−6 μC m J−1, were significantly enhanced in comparison to previous reports on composite thick and thin film PZT and non-PZT based device structures.


Thin Film Structure Pyroelectric Coefficient Current Sensitivity Thin Film Sensor Pyroelectric Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was carried out as Sheykh Bahaee’s Research projects. The authors would like to thank M. Tavvakoli for his useful advice with the electronics setup measurements.


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Farhad Fouladi
    • 1
  • Ehsan Javid
    • 1
  • Yousef Seyed Jalili
    • 1
    • 2
  1. 1.Sheykh Bahaee Research Laboratory, Science and Research Branch, TehranIslamic Azad UniversityTehranIran
  2. 2.Physics Research Center, Sciences and Research BranchIslamic Azad UniversityTehranIran

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