Fabrication and characterization of fast response pyroelectric sensors based on Fe-doped PZT thin films
Pyroelectric IR-detectors based on Pb(1−y)Fey(Zrx,Ti(1−x))O3 thin film have been successfully fabricated via ex situ oxidization annealing of DC magnetron sputtered conductive Fe doped lead-zirconium-titanium thin film on Au/SiO2/Si substrates. Structural as well as electro-optical properties were characterized. The results indicate that Fe-doping has had a remarkable structural effect namely, grain-size reduction, enhanced device voltage responsivity, 67.23 mV/mJ, and current-sensitivity, 5.16 × 10−6 mA/mJ. Moreover the pyroelectric coefficient, 609 μC m−2 °C−1, and merit figure, 1.43 × 10−6 μC m J−1, were significantly enhanced in comparison to previous reports on composite thick and thin film PZT and non-PZT based device structures.
KeywordsThin Film Structure Pyroelectric Coefficient Current Sensitivity Thin Film Sensor Pyroelectric Current
This work was carried out as Sheykh Bahaee’s Research projects. The authors would like to thank M. Tavvakoli for his useful advice with the electronics setup measurements.
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