Mechanical and electrical switching of local ferroelectric domains of K0.5Bi4.5Ti4O15 film

  • Hongyang Zhao
  • Kang Cai
  • Zhenxiang Cheng
  • Zhibin Ma
  • Hideo Kimura
  • Tingting Jia


Ferroelectric/Piezoelectric K0.5Bi4.5Ti4O15 (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electrical field and mechanical force in KBT film was demonstrated. The dark and bright contrast represents the PFM response of the up and down polarized domains, which can be written by a dc bias of ±12 V or a mechanical force of 40–50 nN. The successful demonstration of mechanical force switching of ferroelectric domain in KBT film other than electric field provides a novel mean for information storage and sensors.


Domain Wall Mechanical Force Piezoelectric Material Scanning Probe Microscopy Domain Switching 
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Author H. Y. Zhao thanks the support by Chinese National Natural Science Foundation (Grant No. 51402327). A part of this work was conducted in GRENE and supported by the “Nanotechnology Platform” (Project No. 12024046) both sponsored by MEXT, Japan. Author Z. X. Cheng thanks ARC for support through a Future Fellowship.


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Department of Materials Science and EngineeringWuhan Institute of TechnologyWuhanChina
  2. 2.Institute for Superconducting and Electronics MaterialsUniversity of WollongongFairy MeadowAustralia
  3. 3.National Institute for Materials ScienceTsukubaJapan

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