Mechanical and electrical switching of local ferroelectric domains of K0.5Bi4.5Ti4O15 film
Ferroelectric/Piezoelectric K0.5Bi4.5Ti4O15 (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electrical field and mechanical force in KBT film was demonstrated. The dark and bright contrast represents the PFM response of the up and down polarized domains, which can be written by a dc bias of ±12 V or a mechanical force of 40–50 nN. The successful demonstration of mechanical force switching of ferroelectric domain in KBT film other than electric field provides a novel mean for information storage and sensors.
KeywordsDomain Wall Mechanical Force Piezoelectric Material Scanning Probe Microscopy Domain Switching
Author H. Y. Zhao thanks the support by Chinese National Natural Science Foundation (Grant No. 51402327). A part of this work was conducted in GRENE and supported by the “Nanotechnology Platform” (Project No. 12024046) both sponsored by MEXT, Japan. Author Z. X. Cheng thanks ARC for support through a Future Fellowship.
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