Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique
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Pure and lutetium (Lu) incorporated zinc oxide (ZnO) thin films were deposited by a sol–gel route. The effect of Lu contribution on the properties of ZnO was examined in detail by means of XRD, AFM, SEM, UV–Vis spectrophotometer, and I–V measurements. The nano-sized ZnO:Lu samples had hexagonal wurtzite structure with c-axis (002) preferential orientation. The pure ZnO nano-particles homogeneously scattered on the film surface and this homogeneous particle distribution was deteriorated with Lu incorporation. Ohmic contacts to the ZnO:Lu films were formed using gold (Au) metallization schemes. As-deposited Au contacts exhibited linear current–voltage characteristics. The optical band gap for pure ZnO went up from 3.281 to 3.303 eV with low Lu contribution level up to 3 at.%, then it decreased with more Lu level. The Urbach energy was also studied and it was found that Eu depended on Lu incorporation level.
KeywordsLutetium Atomic Force Microscopy Analysis Texture Coefficient Urbach Energy Urbach Tail
This study was supported by Erzurum Technical University Fund, Project no: 2015/19. The author would like to thank Dr. Erdal Sönmez for his supports.
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