CdSe quantum dot/AlOx based non-volatile resistive memory
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We present an all-solution processed bipolar non-volatile resistive memory device with CdSe quantum dot/metal–metal oxide/quantum dot structure. The two terminal device exhibits excellent switching characteristics with ON/OFF ratio >104. The device maintained its state even after removal of the bias voltage. The switching time is around 14 ns. Device did not show degradation after 4000 s retention test. The memory functionality was consistent even after multiple cycles of operation (100,000) and the device is reproducible. The switching mechanism is discussed on the basis of charge trapping in quantum dots with metal oxide serving as the barrier. The mechanism is supported by observation of variation in capacitance–frequency measurements.
KeywordsSwitching Time Switching Characteristic Charge Trapping Thin Metal Layer Resistive Memory
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2014R1A1A2058814).