A facile method to oxidize p-type Zinc Selenide nanowires into n-type Zinc Oxide nanowires

  • Xiwei Zhang
  • Zhenjie Tang
  • Dan Hu
  • Zhi Wang
  • Fengjun Yu
  • Haitao Cui
  • Tongshuai Xu
  • Lin Ju


A facile method was used to oxidize p-type Zinc Selenide (ZnSe) nanowires into n-type Zinc Oxide (ZnO) through a 700 °C annealing process in air. Single crystal ZnSe nanowires, with a hole concentration of 0.805 × 1018 cm−3 and a negative photoconductivity, were oxidized into polycrystalline ZnO nanowires with an electron concentration of 4.88 × 1018 cm−3 and a positive photoconductivity. Additionally, both the as-synthesized ZnSe nanowires and the post-oxidized ZnO nanowires presented excellent optoelectronic properties. This method can be used to construct radial p–n junctions or other nano-devices based on a single NW through a regioselective oxidation process.


ZnSe ZnSe Nanowires Single Crystal ZnSe Negative Photoconductivity BiZn 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was supported by the National Natural Science Foundation of China (Nos. 51402004), Program for New Century Excellent Talents in University (NCET-11-0937) and the Science and Technology Development Project of the Henan province (Nos. 142102210380, 142300410366, 152102210293 and 15A510006).


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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Xiwei Zhang
    • 1
  • Zhenjie Tang
    • 1
  • Dan Hu
    • 1
  • Zhi Wang
    • 1
  • Fengjun Yu
    • 1
  • Haitao Cui
    • 1
  • Tongshuai Xu
    • 1
  • Lin Ju
    • 1
  1. 1.College of Physics and Electrical EngineeringAnyang Normal UniversityAnyangPeople’s Republic of China

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