Rapid flame synthesis of multilayer graphene on SiO2/Si substrate
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We report an approach to synthesize transfer-free multilayer graphene films rapidly on SiO2/Si substrates by ethanol/H2 flame in only 2 min. The ethanol/H2 flame not only serves as a heat source and carbon source, but also provides protection atmosphere during the growth process. Raman spectra and TEM analysis show carbon atoms segregate to the Ni/SiO2 interface are demonstrated to be multilayer graphene, while the carbon films form on top of the Ni layer are graphite layer. The graphene films synthesized on quartz substrate after Ni etching exhibits transmittance of up to 81 % at 550 nm and sheet resistance in the range from 1120 to 1540 Ω sq−1.
KeywordsCarbon Film Graphene Film Transmission Electron Microscope Grid Multilayer Graphene Flame Synthesis
This work is supported by the Major Research Plan of National Natural Science Foundation on Nanomanufacturing (No. 91323303), National Natural Science Foundation of China (No. 51275400), National Science and Technology Project (Nos. 2011ZX04014-071, SK201401A53-01, CERS-1-X1), the Fundamental Research Funds for the Central Universities, and China Postdoctoral Science Foundation (Nos. 2012M520081, 2013M530419, 2013M530424, and 2013M532035).
- 24.A. Bisht, S. Chockalingam, O.S. Panwar et al., Synthesis of vertical graphene by microwave plasma enhanced chemical vapor deposition technique, in Physics of Semiconductor Devices, ed. by V.K. Jain, A. Verma (Springer-Verlag, 2014), pp. 559–562Google Scholar