Cu doping effect on the resistive switching behaviors of CoFe2O4 thin films
Spin-coated CuxCo1−xFe2O4 (x = 0, 0.2, 0.4, 0.6, and 0.8) thin films were prepared on Pt/TiO2/SiO2/Si substrates. Pt/CuxCo1−xFe2O4/Pt structures were fabricated to investigate the effect of Cu doping concentration on the resistive switching behaviors. Structural and morphology characterizations revealed that Cu doping improved the crystallization of the thin films as compared to undoped CoFe2O4. Current–voltage characterization showed that all CuxCo1−xFe2O4 thin films showed unipolar resistance switching, but the distribution range of the set voltage, reset voltage, and resistances were much reduced by Cu doping. Clear improvement in the stability of these parameters started to appear with x = 0.4, and the optimized performance was observed in the Pt/Cu0.6Co0.4Fe2O4/Pt structure. The improved stability of the switching parameters was attributed to the enhancement of hopping process between the Fe ions and the Cu ions in the spinel lattice. Our results indicated that appropriate adjustment of the doping elements in oxides can be a feasible approach in achieving stable resistance switching memory devices.
KeywordsBiFeO3 CoFe2O4 Resistive Switching CuFe2O4 High Resistance State
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning (2014R1A1A3049826 and 2014R1A2A1A11051245).
- 11.Y.H. Do, J.S. Kwak, J.P. Hong, J. Korean Phys. Soc. 55(3), 1009–1012 (2009)Google Scholar