Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application
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Phase change behavior in Alx(Sn2Se3)1−x (x = 0.003, 0.010, 0.023) films were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with increasing of Al content. The analysis of X-ray diffraction indicates that the grain size decreases and the crystallization is suppressed by more Al doping. Al0.023(Sn2Se3)0.977 has an excellent thermal stability with the crystallization activation energy of 3.79 eV and the failure time is longer than that of Ge2Sb2Te5 film. The crystallization speed of Al0.023(Sn2Se3)0.977 film is faster than that of GST. The phase transition kinetics of Al0.023(Sn2Se3)0.977 films were investigated. The obtained values of Avrami indexes indicate that a one dimensional growth-dominated mechanism is responsible for the amorphous–crystalline transformation of Al0.023(Sn2Se3)0.977 film. We conclude that Al0.023(Sn2Se3)0.977 film is a good candidate for phase-change random-access memory applications with good thermal stability and high switching speed.
KeywordsSb2Te3 SnSe Phase Change Process Phase Change Random Access Memory Crystallization Speed
The authors would like to acknowledge financial support of the Open Fund of State Key Laboratory of Functional Materials for Informatics (KYZ14031) and the Scientific Research Fund Project of Jiangsu University of Technology (KYY14011).
- 7.T. Morikawa, K. Kurotsuchi, Y. Fujisaki, Y. Matsui, N. Takaura, Jpn. J. Appl. Phys. 51, 031201 (2012)Google Scholar