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Oxygen diffusion in germanium: interconnecting point defect parameters with bulk properties

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Abstract

Oxygen is introduced in germanium during crystal growth and processing and can lead to the formation of clusters that may impact the performance of devices. Therefore the understanding of its properties in germanium over a wide temperature range is important. Here we employ the so-called cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω) to describe oxygen diffusion in germanium. The model describes oxygen diffusion in germanium in the temperature range considered and the derived results are discussed in view of the available experimental data.

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Authors and Affiliations

  1. Department of Materials, Imperial College London, London, SW7 2AZ, UK

    A. Chroneos

  2. Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry, CV1 5FB, UK

    A. Chroneos

  3. Physics Department, V. Karazin Kharkiv National University, Svobody Sq. 4, Kharkiv, 61077, Ukraine

    R. V. Vovk

Authors
  1. A. Chroneos
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  2. R. V. Vovk
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Correspondence to A. Chroneos.

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Chroneos, A., Vovk, R.V. Oxygen diffusion in germanium: interconnecting point defect parameters with bulk properties. J Mater Sci: Mater Electron 26, 7378–7380 (2015). https://doi.org/10.1007/s10854-015-3367-7

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  • DOI: https://doi.org/10.1007/s10854-015-3367-7

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