Oxygen diffusion in germanium: interconnecting point defect parameters with bulk properties



Oxygen is introduced in germanium during crystal growth and processing and can lead to the formation of clusters that may impact the performance of devices. Therefore the understanding of its properties in germanium over a wide temperature range is important. Here we employ the so-called cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω) to describe oxygen diffusion in germanium. The model describes oxygen diffusion in germanium in the temperature range considered and the derived results are discussed in view of the available experimental data.


Germanium Defect Parameter Attempt Frequency Isothermal Bulk Modulus Gate Dielectric Material 
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© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Department of MaterialsImperial College LondonLondonUK
  2. 2.Faculty of Engineering and ComputingCoventry UniversityCoventryUK
  3. 3.Physics DepartmentV. Karazin Kharkiv National UniversityKharkivUkraine

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