Magnetic, structural and transport properties across the Heusler alloy (Co2FeAl)/n-Si interfacial structure

  • Arvind Kumar
  • P. C. Srivastava


Electronic and magneto-transport studies across the Co2FeAl (CFA)/n-Si interfacial structure have been carried out. Magnetic properties of the structure have also been studied from the M–H characteristics and magnetic force microscopy (MFM) features. Surface morphology of the CFA Heusler alloy thin films studied from atomic force microscopy. X-ray diffraction and X-ray photoelectron spectroscopy data of the structure reveals the formation of CFA alloy phase with L21 structure along with few silicide phases. MFM data reveals the formation of fine domain structure with average domain size of ~17 nm with average magnetic signal strength of 0.19°. Electronic transport (I–V) characteristics shows the large reverse current as compared to forward current which indicates the spin based transport from CFA Heusler alloy side to semiconductor side. I–V characteristics performed in presence of magnetic field shows the magnetic field sensitivity for reverse bias.


Reverse Bias Ideality Factor Heusler Alloy Magnetic Force Microscopy Silicide Phase 
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The authors are thankful to Dr. Indra Sulania (Scientist ‘D’, Inter University Accelerator Centre, New Delhi, India) for the MFM/AFM measurements. The authors thankfully acknowledge the administration of Advanced Centre for Materials Science, IIT Kanpur, India for the magnetization measurements facility. One of the authors (Arvind Kumar) also wants to acknowledge the financial support received from the University Grants Commission, New Delhi, India in the form of senior research fellowship (UGC-SRF).


  1. 1.
    G.A. Prinz, Science 282, 1660 (1998)CrossRefGoogle Scholar
  2. 2.
    S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. von Molnár, M.L. Roukes, A.Y. Chtchelkanova, D.M. Treger, Science 294, 1488 (2001)CrossRefGoogle Scholar
  3. 3.
    H. Rozale, A. Lakdja, A. Amar, A. Chahed, O. Benhelal, Comput. Mater. Sci. 69, 229 (2013)CrossRefGoogle Scholar
  4. 4.
    K. Inomata, N. Ikeda, N. Tesuka, R. Goto, S. Sugimoto, M. Wojcik, E. Jedryka, Sci. Technol. Adv. Mater. 9, 014101-1 (2008)CrossRefGoogle Scholar
  5. 5.
    Y. Miura, K. Nagao, M. Shirai, Phys. Rev. B 69, 144413-1 (2004)Google Scholar
  6. 6.
    T.M. Nakatani, A. Rajanikanth, Z. Gercsi, Y.K. Takahashi, K. Inomata, K. Hono, J. Appl. Phys. 102, 033916-1 (2007)CrossRefGoogle Scholar
  7. 7.
    T. Ambrose, J.J. Krebs, G.A. Prinz, Appl. Phys. Lett. 76, 3280 (2000)CrossRefGoogle Scholar
  8. 8.
    T. Block, C. Felser, G. Jakob, J. Ensling, B. Mu¨hling, P. Gu¨tlich, R.J. Cava, J. Solid State Chem. 176, 646 (2003)CrossRefGoogle Scholar
  9. 9.
    M. Belmeguenai, H. Tuzcuoglu, M.S. Gabor, T. Petrisor Jr, C. Tiusan, F. Zighem, S.M. Chérif, P. Moch, J. Appl. Phys. 115, 043918-1 (2014)CrossRefGoogle Scholar
  10. 10.
    A. Yadav, S. Chaudhary, J. Appl. Phys. 115, 133916-1 (2014)CrossRefGoogle Scholar
  11. 11.
    E.I. Shreder, A.D. Svyazhin, K.A. Belozerova, Phys. Met. Metallogr. 114, 904 (2013)CrossRefGoogle Scholar
  12. 12.
    K. Kobayashi, R.Y. Umetsu, R. Kainuma, K. Ishida, T. Oyamada, A. Fujita, K. Fukamichi, Appl. Phys. Lett. 85, 4684 (2004)CrossRefGoogle Scholar
  13. 13.
    G.H. Fecher, C. Felser, J. Phys. D Appl. Phys. 40, 1582 (2007)CrossRefGoogle Scholar
  14. 14.
    A. Kumar, P.C. Srivastava, J. Electron. Mater. 43, 381 (2014)CrossRefGoogle Scholar
  15. 15.
    J.P. Eberhart, Structural and Chemical Analysis of Materials (Dunod, Paris, 1989)Google Scholar
  16. 16.
    S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)Google Scholar
  17. 17.
    A. Bobby, P.S. Gupta, B.K. Antony, Eur. Phys. J. Appl. Phys. 62, 20104-1 (2013)CrossRefGoogle Scholar
  18. 18.
    A. Bobby, P.S. Gupta, B.K. Antony, Eur. Phys. J. Appl. Phys. 60, 10104-1 (2012)CrossRefGoogle Scholar
  19. 19.
    E. Arslan, S. Alt ındal, S. Ozcelik, E. Ozbay, Semicond. Sci. Technol. 24, 075003-1 (2009)CrossRefGoogle Scholar
  20. 20.
    S. F-Garrido, K.U. Ubben, J. Herfort, C. Gao, O. Brandit, Appl. Phys. Lett. 101, 032404-1 (2012)Google Scholar
  21. 21.
    A. Milner, A. Gerber, B. Groisman, M. Karpovsky, A. Gladkikh, Phys. Rev. Lett. 76, 475 (1996)CrossRefGoogle Scholar

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© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Department of PhysicsBanaras Hindu UniversityVaranasiIndia

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