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Spherical and flake-like BN filled epoxy composites: morphological effect on the thermal conductivity, thermo-mechanical and dielectric properties

  • Liang Huang
  • Pengli Zhu
  • Gang Li
  • Fengrui Zhou
  • Daoqiang Lu
  • Rong Sun
  • Chingping Wong
Article

Abstract

Epoxy composites, with boron nitride spheres (s-BN) and flakes (f-BN) as fillers were prepared. The effect of filler morphology, content, and crystallization of BN particles on the thermal conductivity, thermo-mechanical and dielectric properties of the composites were investigated. At the same loading level, s-BN with smaller size and larger surface area led to much more significant increase in the glass transition temperature (T g ), reduction in the coefficient of thermal expansion and lower storage modulus (E′), while much higher thermal conductivities were observed in epoxy composites containing f-BN, owing to the larger aspect ratio and better crystallization. In addition, the introduction of BN fillers only did slightly increase on the dielectric constant and dielectric loss of the epoxy resin. We believe, the BN enhanced epoxy composites, with significantly improved thermal conductivity and thermo-mechanical properties, yet maintaining low dielectric constant and dielectric loss at the same time, have great application potential in the microelectronic insulation industry.

Keywords

Dielectric Loss Boron Nitride High Thermal Conductivity Epoxy Matrix Epoxy Composite 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

This work was financially supported by the National Basic Research Program of China (973 Program) (2015CB057206), National Natural Science Foundation of China (21101165), Guangdong Innovative Research Team Program (Nos. 2011D052 and KYPT20121228160843692), Shenzhen Electronic Packaging Materials Engineering Laboratory (2012-372), Shenzhen Basic Research Plan (JC201005270372A and GJHS20120702091802836).

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Liang Huang
    • 1
    • 2
  • Pengli Zhu
    • 1
  • Gang Li
    • 1
  • Fengrui Zhou
    • 1
  • Daoqiang Lu
    • 1
  • Rong Sun
    • 1
  • Chingping Wong
    • 3
    • 4
  1. 1.Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhenChina
  2. 2.Shenzhen College of Advanced TechnologyUniversity of Chinese Academy of SciencesShenzhenChina
  3. 3.School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaUSA
  4. 4.Department of Electronic EngineeringThe Chinese University of Hong KongHong KongChina

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