The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

  • Yuanpeng Chen
  • Hongwei Liang
  • Xiaochuan Xia
  • Pengcheng Tao
  • Rensheng Shen
  • Yang Liu
  • Yanbin Feng
  • Yuehong Zheng
  • Xiaona Li
  • Guotong Du


The β-Ga2O3 film is grown on c-plane sapphire (Al2O3) substrate using metal organic chemical deposition method. According to high resolution X-ray diffraction measurement results, the epitaxial relationship between β-Ga2O3 film and c-plane sapphire was confirmed. The β-Ga2O3 film is (\( \overline{2} 01 \)) preferred orientation and β-Ga2O3 〈102〉 and 〈010〉 directions are parallel to Al2O3\( 1\overline{1} 0 \)〉 and 〈110〉, respectively. Meanwhile, the Bragg diffraction angles of β-Ga2O3 (\( \overline{2} 01 \)), (\( \overline{4} 01 \)), (111) and (\( \overline{1} 11 \)) planes are carefully measured. Using interplanar spacing equation and Bragg equation, the actual β-Ga2O3 lattice constants were calculated. The results show that lattice constants b and angle β become larger, but the constant a, c becomes smaller. This suggests that it is difficult to growth high quality β-Ga2O3 film with just one type of β-Ga2O3 crystal grains on the Al2O3 substrate due to the mismatch of crystal structure and lattice constants.


Lattice Mismatch Lattice Distortion Bragg Angle Metal Organic Chemical Vapor Deposition Epitaxial Relationship 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



The authors acknowledge useful discussions with Jingchang Sun (School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China). This work was supported by National Natural Science Foundation of China (Nos. 61223005, 61376046, 11405017), the Fundamental Research Funds for the Central Universities (Nos. DUT12LK22, DUT13RC205), the Research Fund for the Doctoral Program of Higher Education (No. 20110041120045), Liaoning Provincial Natural Science Foundation of China (No. 2014020004) and the Jiangxi Provincial Natural Science Foundation of China (No. 20133ACB20005), Liaoning Province University Talents Supporting Plan (No. LJQ2013109), Dalian Science and Technology Fund Plan (No. 2013J21DW026).


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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Yuanpeng Chen
    • 1
  • Hongwei Liang
    • 1
  • Xiaochuan Xia
    • 1
  • Pengcheng Tao
    • 1
  • Rensheng Shen
    • 1
  • Yang Liu
    • 1
  • Yanbin Feng
    • 1
  • Yuehong Zheng
    • 2
  • Xiaona Li
    • 2
  • Guotong Du
    • 1
  1. 1.School of Physics and Optoelectronic EngineeringDalian University of TechnologyDalianChina
  2. 2.Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, School of Materials Science and EngineeringDalian University of TechnologyDalianChina

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