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The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

  • Yuanpeng Chen
  • Hongwei Liang
  • Xiaochuan Xia
  • Pengcheng Tao
  • Rensheng Shen
  • Yang Liu
  • Yanbin Feng
  • Yuehong Zheng
  • Xiaona Li
  • Guotong Du
Article

Abstract

The β-Ga2O3 film is grown on c-plane sapphire (Al2O3) substrate using metal organic chemical deposition method. According to high resolution X-ray diffraction measurement results, the epitaxial relationship between β-Ga2O3 film and c-plane sapphire was confirmed. The β-Ga2O3 film is (\( \overline{2} 01 \)) preferred orientation and β-Ga2O3 〈102〉 and 〈010〉 directions are parallel to Al2O3\( 1\overline{1} 0 \)〉 and 〈110〉, respectively. Meanwhile, the Bragg diffraction angles of β-Ga2O3 (\( \overline{2} 01 \)), (\( \overline{4} 01 \)), (111) and (\( \overline{1} 11 \)) planes are carefully measured. Using interplanar spacing equation and Bragg equation, the actual β-Ga2O3 lattice constants were calculated. The results show that lattice constants b and angle β become larger, but the constant a, c becomes smaller. This suggests that it is difficult to growth high quality β-Ga2O3 film with just one type of β-Ga2O3 crystal grains on the Al2O3 substrate due to the mismatch of crystal structure and lattice constants.

Keywords

Lattice Mismatch Lattice Distortion Bragg Angle Metal Organic Chemical Vapor Deposition Epitaxial Relationship 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors acknowledge useful discussions with Jingchang Sun (School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China). This work was supported by National Natural Science Foundation of China (Nos. 61223005, 61376046, 11405017), the Fundamental Research Funds for the Central Universities (Nos. DUT12LK22, DUT13RC205), the Research Fund for the Doctoral Program of Higher Education (No. 20110041120045), Liaoning Provincial Natural Science Foundation of China (No. 2014020004) and the Jiangxi Provincial Natural Science Foundation of China (No. 20133ACB20005), Liaoning Province University Talents Supporting Plan (No. LJQ2013109), Dalian Science and Technology Fund Plan (No. 2013J21DW026).

References

  1. 1.
    M. Passlack, E.F. Schubert, W.S. Hobson, M. Hong, N. Moriya, S.N.G. Chu, K. Konstadinidis, J.P. Mannaerts, M.L. Schnoes, G.J. Zydzik, J. Appl. Phys. 77, 686 (1995)CrossRefGoogle Scholar
  2. 2.
    M. Mohamed, C. Janowitz, I. Unger, R. Manzke, Z. Galazka, R. Uecker, R. Fornari, J.R. Weber, J.B. Varley, C.G. Van de Walle, Appl. Phys. Lett. 97, 211903 (2010)CrossRefGoogle Scholar
  3. 3.
    T.C. Lovejoy, R. Chen, X. Zheng, E.G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S.T. Dunham, F.S. Ohuchi, M.A. Olmstead, Appl. Phys. Lett. 100, 181602 (2012)CrossRefGoogle Scholar
  4. 4.
    T. Kamimura, K. Sasaki, M.H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, S. Yamakoshi, M. Higashiwaki, Appl. Phys. Lett. 104, 192104 (2014)CrossRefGoogle Scholar
  5. 5.
    K.H. Choi, H.C. Kang, Mater. Lett. 123, 160 (2014)CrossRefGoogle Scholar
  6. 6.
    F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, Q.X. Guo, J. Cryst. Growth 387, 96 (2014)CrossRefGoogle Scholar
  7. 7.
    X. Du, W. Mi, C. Luan, Z. Li, C. Xia, J. Ma, J. Cryst. Growth 404, 75 (2014)CrossRefGoogle Scholar
  8. 8.
    N. Suzuki, S. Ohira, M. Tanaka, T. Sugawara, K. Nakajima, T. Shishido, Phys. Status Solidi (c) 4, 2310 (2007)CrossRefGoogle Scholar
  9. 9.
    D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, R. Schewski, Z. Galazka, M. Albrecht, R. Fornari, J. Cryst. Growth 401, 665 (2014)CrossRefGoogle Scholar
  10. 10.
    T. Zhang, J. Lin, X. Zhang, Y. Huang, X. Xu, Y. Xue, J. Zou, C. Tang, J. Lumin. 140, 30 (2013)CrossRefGoogle Scholar
  11. 11.
    C. Li, J.L. Yan, L.Y. Zhang, G. Zhao, Chin. Phys. B 21, 127104 (2012)CrossRefGoogle Scholar
  12. 12.
    J. Zhang, C. Xia, Q. Deng, W. Xu, H. Shi, F. Wu, J. Xu, J. Phys. Chem. Solids 67, 1656 (2006)CrossRefGoogle Scholar
  13. 13.
    M. Passlack, J.K. Abrokwah, Z. Yu, R. Droopad, C. Overgaard, H. Kawayoshi, Appl. Phys. Lett. 82, 1691 (2003)CrossRefGoogle Scholar
  14. 14.
    U. Hoefer, J. Frank, M. Fleischer, Sens. Actuators B Chem. 78, 6 (2001)CrossRefGoogle Scholar
  15. 15.
    M. Zhong, Z. Wei, X. Meng, F. Wu, J. Li, J. Alloys Compd. 619, 572 (2015)CrossRefGoogle Scholar
  16. 16.
    M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Appl. Phys. Lett. 100, 013504 (2012)CrossRefGoogle Scholar
  17. 17.
    K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi, J. Cryst. Growth 378, 591 (2013)CrossRefGoogle Scholar
  18. 18.
    G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, R. Fornari, Phys. Status Solidi (a) 211, 27 (2014)CrossRefGoogle Scholar
  19. 19.
    C.X. Shan, Z. Liu, S.K. Hark, Appl. Phys. Lett. 90, 193123 (2007)CrossRefGoogle Scholar
  20. 20.
    S.G. Ihn, J.I. Song, T.W. Kim, D.S. Leem, T. Lee, S.G. Lee, E.K. Koh, K. Song, Nano Lett. 7, 39 (2007)CrossRefGoogle Scholar
  21. 21.
    Y. Chen, H. Liang, X. Xia, R. Shen, Y. Liu, Y. Luo, G. Du, Appl. Surf. Sci. 325, 258 (2015)CrossRefGoogle Scholar
  22. 22.
    V. Gottschalch, K. Mergenthaler, G. Wagner, J. Bauer, H. Paetzelt, C. Sturm, U. Teschner, Phys. Status Solidi (a) 206, 243 (2009)CrossRefGoogle Scholar
  23. 23.
    W. Mi, J. Ma, C. Luan, Y. Lv, H. Xiao, Z. Li, Mater. Lett. 87, 109 (2012)CrossRefGoogle Scholar
  24. 24.
    L. Kong, J. Ma, C. Luan, W. Mi, Y. Lv, Thin Solid Films 520, 4270 (2012)CrossRefGoogle Scholar
  25. 25.
    W. Mi, J. Ma, C. Luan, H. Xiao, J. Lumin. 146, 1 (2014)CrossRefGoogle Scholar
  26. 26.
    T. Oshima, T. Nakazono, A. Mukai, A. Ohtomo, J. Cryst. Growth 359, 60 (2012)CrossRefGoogle Scholar
  27. 27.
    S. Geller, J. Chem. Phys. 33, 676 (1960)CrossRefGoogle Scholar
  28. 28.
    Y. Lv, J. Ma, W. Mi, C. Luan, Z. Zhu, H. Xiao, Vacuum 86, 1850 (2012)CrossRefGoogle Scholar
  29. 29.
    L.B. Freund, S. Suresh, Thin Film Materials: Stress, Defect Formation, and Surface Evolution, 1st edn. (Cambridge University Press, London, 2003), pp. 65–89Google Scholar

Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Yuanpeng Chen
    • 1
  • Hongwei Liang
    • 1
  • Xiaochuan Xia
    • 1
  • Pengcheng Tao
    • 1
  • Rensheng Shen
    • 1
  • Yang Liu
    • 1
  • Yanbin Feng
    • 1
  • Yuehong Zheng
    • 2
  • Xiaona Li
    • 2
  • Guotong Du
    • 1
  1. 1.School of Physics and Optoelectronic EngineeringDalian University of TechnologyDalianChina
  2. 2.Key Laboratory of Materials Modification by Laser, Ion and Electron Beam, Ministry of Education, School of Materials Science and EngineeringDalian University of TechnologyDalianChina

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