A combination of “top-down” and “bottom-up” approaches in the fabrication of “nano bridges”

  • R. K. Sahoo
  • D. Damodar
  • C. Jacob


We describe a two step vertical growth of silicon nanowires (SiNWs) and the lateral growth of a bridging network of carbon nanotubes (CNTs) across the SiNWs. SiNWs were formed by an electro-less chemical bath deposition technique using silver nano particles as a virtual mask. Subsequently, the silver nano particles present on the side walls of SiNWs were used as a catalyst in the growth of CNTs by atmospheric chemical vapor deposition technique, forming “nano bridges”. A reduced reflectance of 65 % for the “nano bridge” samples compared to the SiNW samples was obtained suggesting a potential use in anti-reflection coatings.


Field Emission Scanning Electron Microscope Image High Magnification Image SiNWs Array Silicon Groove SiNW Sample 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
    Y. Cui, C.M. Lieber, Science 291, 851 (2000)CrossRefGoogle Scholar
  2. 2.
    X. Duan, Y. Huang, Y. Cui, J. Wang, C.M. Lieber, Nature 406, 66 (2001)CrossRefGoogle Scholar
  3. 3.
    J.H. Hafner, C.-L. Cheung, A.T. Woolley, C.M. Lieber, Prog. Biophys. Mol. Biol. 77, 73 (2001)CrossRefGoogle Scholar
  4. 4.
    S.J. Tans, A.R.M. Verschueren, C. Dekker, Nature 393, 49 (1998)CrossRefGoogle Scholar
  5. 5.
    D. Appell, Nature 419, 553 (2002)CrossRefGoogle Scholar
  6. 6.
    M.S. Islam, S. Sharma, T.I. Kamins, R.S. Williams, Nanotechnology 15, L5 (2004)CrossRefGoogle Scholar
  7. 7.
    T. Shimizu, H. Abe, A. Ando, H. Tokumoto, Physica E 24, 37 (2004)CrossRefGoogle Scholar
  8. 8.
    W.Y. Lee, C.H. Weng, Z.Y. Juang, J.F. Lai, K.C. Leou, C.H. Tsai, Diamond Relat. Mater. 14, 1852 (2005)CrossRefGoogle Scholar
  9. 9.
    Y.-T. Jang, J.-H. Ahn, B.-K. Ju, Y.-H. Lee, Solid State Commun. 126, 305 (2003)CrossRefGoogle Scholar
  10. 10.
    B.-H. Chen, P.-Y. Lo, J.-H. Wei, M.-J. Tsai, C.-L. Hwang, T.-S. Chao, H.-C. Lin, T.-Y. Huang, Electrochem. Solid-State Lett. 8, G290 (2005)CrossRefGoogle Scholar
  11. 11.
    D.M. Allen, I.A. Routledge, IEE Proc. I 130, 49 (1983)Google Scholar
  12. 12.
    D.L. Kendall, Annu. Rev. Mater. Sci. 9, 373 (1979)CrossRefGoogle Scholar
  13. 13.
    B.Y. Lee, K. Heo, A.L. Schmucker, H.J. Jin, J.K. Lim, T. Kim, H. Lee, K.-S. Jeon, Y.D. Suh, C.A. Mirkin, S. Hong, Nano Lett. 12, 1879 (2012)CrossRefGoogle Scholar
  14. 14.
    J.W. Kanga, J.H. Leeb, H.J. Leeb, H.J. Hwang, Physica E 27, 332 (2005)CrossRefGoogle Scholar
  15. 15.
    J.S. Lee, M.S. Islam, S. Kim, Nano Lett. 6, 1487 (2006)CrossRefGoogle Scholar
  16. 16.
    G.S. Bisht, G. Canton, A. Mirsepassi, L. Kulinsky, S. Oh, D. Dunn-Rankin, M.J. Madou, Nano Lett. 11, 1831 (2011)CrossRefGoogle Scholar
  17. 17.
    R.K. Sahoo, V. Daramalla, C. Jacob, Mat. Sci. Eng. B 177, 79 (2012)CrossRefGoogle Scholar
  18. 18.
    K. Peng, J. Hu, Y. Yan, Y. Wu, H. Fang, Y. Xu, S. Lee, J. Zhu, Adv. Funct. Mater. 16, 387 (2006)CrossRefGoogle Scholar
  19. 19.
    J. Tang, J. Shi, L. Zhou, Z. Ma, Nano-Micro Lett. 3, 129 (2011)CrossRefGoogle Scholar
  20. 20.
    H. Fang, Y. Wu, J. Zhao, J. Zhu, Nanotechnology 17, 3768 (2006)CrossRefGoogle Scholar
  21. 21.
    W. Ye, C. Shen, J. Tian, C. Wang, C. Hui, H. Gao, Solid State Sci. 11, 1088 (2009)CrossRefGoogle Scholar
  22. 22.
    Y.H. Ogata, K. Kobayashi, M. Motoyama, Curr. Opin. Solid State Mater. Sci. 10, 163 (2006)CrossRefGoogle Scholar
  23. 23.
    K.G. Stamplecoskie, J.C. Scaiano, V.S. Tiwari, H. Anis, J. Phys. Chem. C 115, 1403 (2011)CrossRefGoogle Scholar
  24. 24.
    S.-H. Ryu, C. Yang, W.J. Yoo, D.-H. Kim, T. Kim, J. Korean Phys. Soc. 54, 1016 (2009)CrossRefGoogle Scholar
  25. 25.
    D. Takagi, Y. Homma, H. Hibino, S. Suzuki, Y. Kobayashi, Nano Lett. 6, 2642 (2006) CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Materials Science CentreIndian Institute of TechnologyKharagpurIndia

Personalised recommendations