Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires
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Present study is related to the synthesis of cadmium selenate nanowires via template-assisted electrodeposition approach and their characterization before and after lithium (Li3+) ion beam irradiation. Energy-dispersive X-ray analysis and X-ray diffraction study confirmed the synthesis of cadmium selenate nanowires with monoclinic structure. Electrical properties were examined with current–voltage (I–V) source meter using two-probe method. The electrical conductivity augmentation was perceptible for semiconducting nanowires with the increase in the ion beam fluence. The band gap of pristine nanowires was found to be 1.96 eV, while the red shift was observed in the optical band gap of ion irradiated nanowires and it approaches to the value of 1.31 eV at last fluence. In XRD spectra, no evidence was found of phase change or shifting in ‘2θ’ position or evolution of any new peak. However, variation in the peak intensities was noticed that could be the result of movement of plane orientation. This study revealed that the defects induced by the ion irradiation and variation in potential gradient with fluence plays a major role in the alteration of the optical and electrical properties of the semiconducting nanowires.
KeywordsCharge Carrier Schottky Barrier High Fluence Texture Coefficient Resonant Tunneling Diode
The authors wish to thank the help provided from the Director and technical staff of pelletron group during the irradiation experiment at Inter University Accelerator Centre (IUAC), New Delhi, India. Authors also acknowledge NIT Kurukshetra, India for SEM and XRD facilities and SAI Lab, Thapar University, Patiala, India for providing EDS facility.
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