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Improvements in the performances of In–Ga–Zn–O thin-film transistors on glass substrates by annealing treatment

  • Chong Liu
  • Min Wei
  • Zhuo Jia
  • Yi-Feng Deng
  • Hao Liu
  • Hong Deng
Article

Abstract

Thin film transistors (TFTs) with amorphous InGaZnO (IGZO) channel layer were fabricated by radio frequency magnetron sputtering technique. The IGZO films show optical transparency over 80 % both before annealing and after annealing. It was found that performances of transistors with IGZO thin films annealed in air at 450 °C were significantly improved. Through annealing treatment, Saturation current of TFTs increased from 2.8 to 181 μA at bias of VDS = 20, VGS = 20 V, and saturation mobility is up from 1.49 to 15.8 cm2 V−1 s−1. In addition, X-ray photoelectric spectroscopy (XPS) was performed to provide elemental information on the surface of the IGZO films before and after annealing. O1s XPS spectra of unannealed and annealed IGZO films indicated oxygen vacancy concentration decreased by annealing treatment.

Keywords

Threshold Voltage Annealing Treatment Indium Oxide Thin Film Transistor Channel Layer 
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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Chong Liu
    • 1
  • Min Wei
    • 1
  • Zhuo Jia
    • 1
  • Yi-Feng Deng
    • 1
  • Hao Liu
    • 1
  • Hong Deng
    • 1
  1. 1.State Key Laboratory of Electronic Thin Films and Integrated DevicesUESTCChengduPeople’s Republic of China

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