Improvements in the performances of In–Ga–Zn–O thin-film transistors on glass substrates by annealing treatment
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Thin film transistors (TFTs) with amorphous InGaZnO (IGZO) channel layer were fabricated by radio frequency magnetron sputtering technique. The IGZO films show optical transparency over 80 % both before annealing and after annealing. It was found that performances of transistors with IGZO thin films annealed in air at 450 °C were significantly improved. Through annealing treatment, Saturation current of TFTs increased from 2.8 to 181 μA at bias of VDS = 20, VGS = 20 V, and saturation mobility is up from 1.49 to 15.8 cm2 V−1 s−1. In addition, X-ray photoelectric spectroscopy (XPS) was performed to provide elemental information on the surface of the IGZO films before and after annealing. O1s XPS spectra of unannealed and annealed IGZO films indicated oxygen vacancy concentration decreased by annealing treatment.
KeywordsThreshold Voltage Annealing Treatment Indium Oxide Thin Film Transistor Channel Layer