Indium rich InGaN solar cells grown by MOCVD
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This study focuses on both epitaxial growths of InxGa1−xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7–7.1 % in Sample B, and 26.6–15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm2, open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm2) at room temperature for finished devices was 0.66 %.
KeywordsSolar Cell Metal Organic Chemical Vapor Deposition Solar Cell Device Solar Cell Structure Current Voltage Measurement
This work is supported by the projects DPT-HAMIT, DPT-FOTON, NATO-SET-193 and TUBITAK under Project Nos. 113E331, 109A015 and 109E301. One of the authors (E.O.) also acknowledges partial support from the Turkish Academy of Sciences.
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